日本語
Research Organization of Science and Technology

 (Male)
 Yoshinobu   AOYAGI  Visiting Senior Researcher

■Concurrent affiliation
Research Organization of Science and Technology   /
Advanced Micro/Nano System Technology Research Center
Research Organization of Science and Technology   /
SR Center
■Graduate school/University/other
03/1965  Osaka University  Faculty of Engineering Science  Department of Electrical Engineering  Graduated
03/1965  Osaka University  "Graduate School, Division of Engineering Science"  Master's course, Physics  Completed
03/1971  Osaka University  "Graduate School, Division of Engineering Science"  Physics  Doctoral course
■Academic degrees
Doctor of Engineering (03/1972 Osaka University)  
■Career history
04/01/2007-  立命館大学・特別招聘教授
04/01/2000-03/31/2008  東京工業大学・教授
07/01/1988-03/31/2003  理化学研究所・主任研究員
07/01/1985-06/30/1988  理化学研究所・副主任研究員
04/01/1972-06/30/1985  理化学研究所半導体工学研究所・研究員
1970-  日本学術振興会・研究員
04/01/1989-03/31/1992  大阪大学極限物質センター客員教授兼務
04/01/1992-03/31/1997  東京理科大学理工学部教授兼務
04/01/1992-  東洋大学客員教授兼務
10/01/1992-09/1993  ルンド大学(スエーデン)材料物理学部客員教授兼務
04/01/1995-04/01/1996  北海道大学量子海面研究センター客員教授兼務
■Committee history
04/1977-03/1979  日本科学技術会議航空・電子等技術審議会インテリジェント材料分科会委員
04/2002-03/2003  科学・技術審議会技術・研究基盤部会産学官連携推進委員会利益相反ワーキンググループ委員
04/2003-  (独)科学技術振興機構 さきがけ研究「ナノと物性」領域 領域アドバイザー
04/2004-  (独)科学技術振興機構 戦略的創造研究推進事業 「高度情報処理・通信の実現に向けたナノファクトリーとプロセス観測」領域 領域アドバイザー
04/1990-03/1995  日本学術振興会「極微構造電子物性」151委員会原子オーダープロセッシング分科会主査
04/2001-  日本学術振興会「未踏・ナノデバイステクノロジー」151委員会委員長
04/2007-03/2008  日本科学技術振興機構特任フェロー 
04/2008-  日本学術振興会協力会評議委員
10/2007-  国際ナノアーキテクトロニクス研究拠点評価委員
04/2007-03/2009  戦力的国際科学技術協力推進事業評価委員(ドイツ)
04/2009-  戦力的国際科学技術協力推進事業評価委員(スペイン)
04/1990-03/1991  米国MRS”Atomic Growth and Processing”シンポジウム議長
04/1991-03/1992  表面プロセス国際会議実行委員長
04/1993-03/1994  第3回原子層結晶成長国際会議実行委員長
04/1991-03/1993  日本応用物理学会常任理事
04/1991-03/1992  応用物理学会「応用物理」副編集委員長
04/1992-03/1993  応用物理学会「応用物理」編集委員長
04/1994-03/2000  応用物理学会評議委員
04/1993-03/1995  混晶エレクトロニクスシンポジウム論文委員長
04/1995-03/1997  電子材料シンポジウム実行委員長
04/1996-03/1998  Editor in chief of “Japanese Journal of Applied Physics”
04/1997-03/2005  レーザー学会理事
04/1995-  レーザー技術総合研究所評議委員
04/1998-03/2002  Editor in chief of “Micoroelectronic Engineering”
04/1998-03/2000  マイクロプロセス国際会議論文委員長
10/1999-09/2004  日本学術振興会戦略的創造研究「量子相関のダイナミクス制御」プロジェクトリーダー
04/2000-03/2002  マイクロプロセス国際会議実行委員長
04/2002-03/2003  固体素子・材料国際会議論文委員長
04/2002-03/2007  Editor in chief of “Materials Science and Technology B”
04/2003-03/2006  電子材料シンポジウム組織委員長
04/2007-03/2008  IPAP(日本物理・応物系学術誌刊行会) 副理事長
04/2008-  日本物理・応物系学術誌刊行センターセンター長
04/2006-  ナノ電子材料物性国際会議 組織委員長
03/2010-04/2013  日本ナノ学会 理事
04/1988-03/2013  米国物理学会(AIP)
■Academic society memberships
The Japan Society of Applied Physics  
The Physical Society of Japan  
The Laser Society of Japan  
American Institute of Physics (AIP)  
The Society of Nano Science and Technology  
■Subject of research
Development of High-output Deep-ultraviolet Semiconductor Light Emitting Device and Its Application to Environmental Electronics and Biotechnology
Electrical Control of Neural Information Transmission in Neuron
■Research summary
The outlines of my main research subjects are as follows:

 [Research Subject (1) Outline]
The development of a high efficient deep ultraviolet light emission semiconductor element and its application to the environment and biology・・・
I develop a new high efficient deep ultraviolet light emission element that emit light efficiently and powerfully in a deep ultraviolet region from 200nm to 350nm and research its application to water purification, sterilization and biology.


Nitride semiconductor is the only semiconductor material that can emit light in the deep ultraviolet region and receives a lot of attention as a material that support the important scientific and technological infrastructure to solve the important social subject in the 21the century such as environment medical care and safety.
Although the development of the high power deep ultraviolet light emission elements with the power from 1 watt to 100 watts in particular is an indispensable technology that support the hardware side to solve the problems such as purification of water, class is aimed at future purification of water, decomposition of hardly decomposable materials such as PCB, sterilization to prevent in-hospital infection and other environmental issues in the future, there is not any methodology to increase the power density and no one ha not yet succeeded in increasing power density in the world.
The purpose of this research is to send a new concept called "Environmental Electronics" for the first time in the world, establish a new great research group in the interdisciplinary field between the semiconductor electronics and environment studies.

Concretely,
using the unique 2 beam interferogram crystal growth in situ observation system in the world that we have developed, we investigate the initial process of crystalization, the control of heterointerface and high quality reproducible AlGaN epitaxial crystalization which have been difficult to be researched so far. Particularly, we focus on the research on the hetero structure interface control between nitride semiconductors and metal interface control.
In addition, using AlGaN-based materials that are the materials in a ultraviolet region, we establish a technology to create a vertical light emitting device structure that has been impossible to be established so far. We develop a new method to introduce substrate exfoliating layer, succeeded in the technology to exfoliate sapphire substrates and consider the clarification of exfoliation process and a new methodology.
Furthermore, we attempt to further improve the quality of AlGaN crystal and obtain high internal quantum efficiency. In particular, we attempt to introduce quantum dots and perform high concentration doping using a co-doping method. In addition, we use these methods to establish a system corresponding environment. We clarify the usefulness of our technologies by actually attempting to apply them to water purification, sterilization, etc.  

[Research Subject (2) Outline]
Electrical control of neurotransmission in neurons・・・
We attempt to electronically control the conveyance of information in the nerves in the method that has not existed so far.


No one has not yet succeeded in the electrical control, different from the conventional information transmission method in electronics.
If this subject is achieved successfully, a field called New Neuroelectronics is established and various applications and developments to the fields such as the control of pain of body and the local activity awakening are assumed. Our laboratory aims to establish a new information conveyance control method and its applications in cooperation with the biology laboratory.
The control method in a single neuron is already proposed by us and proved by the experiments.
■Research keywords
nanoelectronics, environmental electronics, nitride semiconductor, 2-light beam in-situ observation method, quantum dot, alternative co-doping method , vertical deep-ultraviolet-light-emitting semiconductor device, sterilization, water purification, decomposition of refractory molecules, neurotransmitter control, three terminal control 
■Research activities   (Even top three results are displayed. In View details, all results for public presentation are displayed.)

Books
Optical Properties of Advanced Materials  Yoshinobu Aoyagi, Kotaro Kajikawa  Springer  1-38  06/2012  978-3-642-33526-6
基礎からわかるナノデバイス  青柳克信、石橋幸治、高柳英明、中ノ勇人、平山祥郎  コロナ社  03/2011
先端材料光物性  青柳克信、南不二雄、吉野淳二、梶川浩太郎  コロナ社  109-190  02/2008
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Papers
A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN  Y. Aoyagi, N. Kurose  Applied Physics Letters  102/ 4, 041114-1-041114-3  2013  0003-6951/2013/102(4)/041114/3/$30.00
Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source  Y. Aoyagi, M. Takeuchi, S. Iwai, H. Hirayama  AIP Advances  2, 0012177-0012183  2012  10.1063/1.3698156
Control of neural signal propagation in neuron by three therminal electrodes method  Y. Aoyagi, M. Yano-Mitsui, T. Miyadera, K. Tsukagoshi, H. Kamiguchi  Elec. Letters  48/ 18, 1093-1095  08/2012
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Research presentations
Large area micro-plasma exited AlGaN deep ultravioket light emitter  International Display Workshop  12/04/2012
Development of new deep ultra-violet light emitter using micro-plasma excitation of AlGaN and its application  ICNMS2012  12/01/2012
Development of large area micro-plasma-excited AlGaN deep ultraviolet light device (MIPE) for disinfection of water  Water Contamination Emergency Conference 5  11/19/2012
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Grants-in-Aid for Scientific Research (KAKENHI)
Link to Grants-in-Aid for Scientific Research -KAKENHI-

Competitive grants, etc. (exc. KAKENHI)
高出力深紫外半導体発光素子の開発  独立行政法人新エネルギー・産業技術総合開発機構・大学発事業創出実用化研究開発事業助成金  2009  2010  Main representative
ナノテクノロジーを用いた高効率、高出力縦型深紫外発光素子の開発とその環境、バイオ、計測への応用  文部科学省知的クラスター創成事業  2008  2012  Main representative
量子相関機能のダイナミクスに関する研究  科学技術振興事業団戦略的基礎研究推進事業(CREST)  1999  2003  Main representative
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Achievements of joint / funded research
ブレーズドホログラフィック回折格子の開発 【概要】全く新しい手法で回折格子を作る方法を開発、現在では市場の60%以上を本方法で占めるようになっている。  04/1975-03/1979  Joint research  Main representative
EBEPイオン源の開発とその応用 【概要】全く新しい大電流イオン源を開発、それをエッチング装置、イオン源として応用  04/1980-03/1982  Joint research  Main representative
紫外域分光放射照度測定によるオゾン濃度測定装置の校正方法の研究  11/2010-03/2011  Joint research
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Academic awards
応用物理学会  応用物理学会論文賞  09/2007
応用物理学会  応用物理学会フェロー表彰  08/2007
マイクロプロセス国際会議組織委員会  マイクロプロセス国際学会Best Paper Award  12/2002
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Intellectual property rights
深紫外発光素子及びその製造方法  特願2009-278130
電子素子および電子素子の製造方法  2008-265106  2009-111377
ELECTRONIC DEVICE AND METHOD FOR PRODUCING ELECTRONIC DEVICE  US20080194106  US2009139752 (A1)
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Research exchange preferred theme
深紫外半導体発光デバイスの開発とその応用  高出力縦型深紫外発光デバイスの開発、このいろいろな分野への応用
(キーワード)深紫外発光半導体デバイス、デバイス応用、環境応用、医療応用、殺菌応用、計測応用、水処理応用、光源
(メッセージ)いろいろな形態が考えられますので気軽にご相談ください。  Technical consultation,Commisioned research,Joint research,Other
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■Tel
077-561-3769
■E-mail
  
■Research keywords(on a multiple-choice system)
Micro/Nanodevice
Nano Structural Science
Environmental Technology/Environmental Material
Applied Physical Properties/Crystal Engineering
Electronic materials/ Electric materials
Electron device/ Electronic equipment
Thin film/Surface and interfacial physical properties
Inorganic materials/Physical properties
Nano Materials/Nano Bioscience