論文
公開件数:498件
No. 発表論文の標題 著者名等 掲載誌名 巻/号,頁 出版年月 ISSN DOI URL
1 A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN
Y. Aoyagi, N. Kurose
Applied Physics Letters
102/ 4, 041114-1-041114-3
2013

0003-6951/2013/102(4)/041114/3/$30.00

2 Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source
Y. Aoyagi, M. Takeuchi, S. Iwai, H. Hirayama
AIP Advances
2, 0012177-0012183
2012

10.1063/1.3698156

3 Control of neural signal propagation in neuron by three therminal electrodes method
Y. Aoyagi, M. Yano-Mitsui, T. Miyadera, K. Tsukagoshi, H. Kamiguchi
Elec. Letters
48/ 18, 1093-1095
2012/08



4 High-sensitivity ozone sensing using 280nm deep ultraviolet light-emitting diode for depletion of natural hazard ozone
Y. Aoyagi, M. Takeuchi, K. Yoshida, M. Kurouchi, Y. Nanishi, H. Sugano, Y. Ahiko, H. Nakamura
Journal of Environmental Protection
3/ 8, 695-699
2012/08

10.4236/jep2012.38082Published Online August 2012(http://www.SciRP.org/journal/jep)

5 Inactivation of bacterial viruses in waterusing deep ultraviolet semiconductor light-emitting diode
Y. Aoyagi, M. Tgakeuchi, K.Yoshida, M. Kurouchi, N. Yasui, N. Kamiko, T. Araki, Y. Nanishi
J.Environmental Engineering
137/ 12, 1215-1218
2011

10.1061/ASCE)EE.1943-7870.0000442

6 High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
Y. Aoyagi, M. Takeuchi, S. Iwai, H. Hirayama
Appl. Phys. Letters
99/ 11, 112110
2011

10.1063/1.3641476

7 Anisotropic transport in graphene on SiC substrate with periodic nanofacets
S.Odaka, H. Miyazaki, S-L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H.Kataura, K. Tsukagoshi, Y. Aoyagi
Appl. Phys. Letters
96, 062111-1--062111-3
2010



8 AlGaN channel HEMT's on AlN buffer layer with sufficiently low off-state drain leakage current
T. Nanjo, M. Takeuchi, A. Imai, M. Suita, T. Oishi, Y. Abe, E. Yagyu, T. Kurata, Y. Tokuda and Y. Aoyagi
Electron. Letters
45, 1349
2009



9 Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors,
T.Minari, M.Kano, T.Miyadera, S.D.Wang, Y.Aoyagi, K.Tsukagoshi
Applied Physics Letters
94/ 9, 093307-1-093307-3
2009



10 AlN/AlGaN short-period super-lattice sacrificial layers in laser lift-off for vertical-type AlGaN-Base deep ultraviolet light emitting diodes
M. Takeuchi, T. Maegawa, H. Shimizu, S. Ooishi, T. Ohtsuka , Y. Aoyagi
Appl. Phys. Letters
94, 061117-1-061117-3
2009



11 First Operation of AlGaN Channel High Electron Mobility Transistors
T. Nanjo, M. Takeuchi, M. Suita, T. Oishi, Y. Tokuda, Y. Aoyagi
Appl. Phys. Express
1, 011101-1-011101-3
2008



12 Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
T.Nanjo, M. Takeuchi, M.Suita, T.Oisi. Y. Abe, Y.Tokuda, Y. Aoyagi
Appl. Phys. Letters
92, 263502-1-263502-3
2008



13 Excitation-density dependence of photoluminescence from Si-doped AlGaN/AlGaN multiple quantum wells at low temperature
Y. Kajitani, M. Takeuchi, Y. Aoyagi
Jpn. J. Appl. Phys.
47/ 1, 47-50
2008



14 Coulomb blockade oscillations in patterned ultrathin craphite films
S.Odaka, H. Miyazaki, T. Moriki, T.Sato, A. Kanda, K. Tsukagoshi, Y. Ootuka, Y. Aoyagi
Jpn. J. Appl. Phys.
47/ 1, 697-699
2008



15 Charage trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment
T.Miyadera, S.D.Wang, K. Tsukagoshi, Y. Aoyagi
Appl. Phys. Letters
93, 033304-1-033304-3
2008



16 Bias stress instability in pentacene thin film transistors: contact resistance chargeand channel threshod voltage shift
S.D.Wang, T. Minari, T. Miyadera, Y. Aoyagi, K. Tsukagoshi
Appl. Phys. Letters
94, 063305-1-063305-3
2008



17 Correlation between grain size and device parameters in pentacene thin film transistors
S.D.Wang, T. Miyadera, T.Minari, Y. Aoyagi, K. Tsukagoshi
Appl. Phys. Letters
93, 043311-1-043311-3
2008



18 Selective organization of solution-processed organic field-effect transistors
T. Minari, M. Kano, T.MIyadera, S.D. Wang, Y. Aoyagi, M.Seto, T. Nemoto, SA. Isoda, K. Tsukagoshi
Appl. Phys. Letters
92, 173301-1-173301-3
2008



19 Direct determination of photonic band structure for waveguiding modes in two-dimensional photonic crystals
Inoue, Shin-ichiro; Yokoyama, Shiyoshi; Aoyagi, Yoshinobu
OPTICS EXPRESS
16/ 4, 2461-2468
2008/02

10.1364/QE.16.002461

20 Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD
M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, Y. Kumagai, A. Koukitu and Y. Aoyagi
J. Crystal Growth
298, 336-340
2007



21 Quantum response of carbon nanotube quantum dots to terahertz wave irradiation
T. Fuse, Y. Kawano, T. Yamaguchi, Y. Aoyagi and K. Ishibashi
Nanotechnology
18, 044001-1-044001-4
2007



22 Quasi-periodic coulomb blockade oscilations in a single-wall carbon nanotube bundle
K. Tsukagoshi, S. Uryu and Y. Aoyagi
Solid State Phenom.
121, 537-540
2007



23 深紫外窒化物系発光デバイス
川崎宏治、武内道一、青柳克信
光学
35/ 5, 246--253
2006



24 ナノスケール物質電気伝導探索のためのナノギャップ電極作製と応用
塚越 一仁 ,重藤 訓志 ,Kasumov A. Y. ,川村 稔 ,青柳 克信
応用物理
75/ 3, 332--337
2006



25 Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique
K. Kawasaki, C. Koike, M. Takeuchi and Y. Aoyagi
Appl. Phys. Lett.
89, 261114-1-261114-3
2006



26 Straight and Smooth Etching of GaN (1-100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques
M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki and Y. Aoyagi
Jpn. J. Appl. Phys.
45, 3988-3991
2006



27 Fabrication of GaN-based striped structures along the <1120> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage
M. Itoh, T. Kinoshita, K. Kawasaki, M. Takeuchi, C. Koike and Y. Aoyagi
Phys. Stat. Sol. (c)
3, 1624-1628
2006



28 TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
N. Kuwano, M. Hijikuro, S. Hata, M. Takeuchi and Y. Aoyagi
J. Crystal Growth
298, 285-287
2006



29 TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment
M. Hijikuro, N. Kuwano, M. Takeuchi, Y. Aoyagi
Physica Status Solidi (c)
3, 1832-1835
2006



30 Straight and smooth etching of GaN (1100) plane by combination of reactive ion etching and KOH wet etching techiniques
M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki and Y. Aoyagi
Jpn. J. Appl. Phys. Pt.1
45, 3988-3991
2006



31 Fabrication of GaN-based striped strucutres along the <1120> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage
M. Itoh, T. Kinoshita, K. Kawasaki, M. Takeuchi, C. Koike and Y. Aoyagi
Phys. Stat. Sol.(c)
3, 1624-1628
2006



32 Investigation of defects in GaN with varying Mg doping concentrations
T. Obata, N. Matsumura, K. Ogiwara, H. Hirayama, Y. Aoyagi and K. Ishibashi
Phys. Stat. Sol.(c)
6, 1775-1778
2006



33 TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment
M. Hijikuro, N. Kuwano, M. Takeuchi and Y. Aoyagi
Phys. Stat. Sol.(c)
3, 1832-1835
2006



34 Ultraviolet second-harmonic generation and sum-frequency mixing in two-dimensional nonlinear optical polymer photonic crystals
S. Inoue and Y. Aoyagi
Jpn. J. Appl. Phys. Pt.1
45, 6103-6107
2006



35 High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte
J. Takeya, K. Yamada, K. Hara, K. Shigeto, K. Tsukagoshi, S. Ikehata and Y. Aoyagi
Appl. Phys. Lett.
88, 112102-1112102-3
2006



36 Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments
T. Kanbara, T. Takenobu, T. Takahashi, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi and H. Kataura
Appl. Phys. Lett.
88, 053118-1-053118-3
2006



37 Gate capacitance in electrochemical transistor of single-walled carbon nanotube
H. Shimotani, T. Kanbara, Y. Iwasa, K. Tsukagoshi, Y. Aoyagi and H. Kataura
Appl. Phys. Lett.
88, 073104-1-073104-3
2006



38 Direct nanoimprint of inorganic-organic hybrid glass
M. Okinaka, K. Tsukagoshi and Y. Aoyagi
J. Vac. Sci. Technol. B
24, 1402-1404
2006



39 Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure
M. Okinaka, S. Inoue, K. Tsukagoshi and Y. Aoyagi
J. Vac. Sci. Technol. B
24, 271-273
2006



40 High-performance transparent flexible transistors using carbon nanotube films
T. Takenobu, T. Takahashi, T. Kanbara, K. Tsukagoshi, Y. Aoyagi and Y. Iwasa
Appl. Phys. Lett.
88, 033511-1-033511-3
2006



41 Nano-scale interface controls for future plastic transistors
K. Tsukagoshi, I. Yagi and Y. Aoyagi
Sci. Technol. Adv. Mater.
7, 231-236
2006



42 Reproducible formation of nanoscale-gap electrodes for single-molecule measurements by combination of FIB deposition and tunneling current detection
K. Shigeto, M. Kawamura, A. Y. Kasumov, K. Tsukagoshi, K. Kono and Y. Aoyagi
Microelectron. Eng.
83, 1471-1473
2006



43 Organic light-emitting diode driven by organic thin film transistor on plastic substrates
K. Tsukagoshi, J. Tanabe, I. Yagi, K. Shigeto, K. Yanagisawa and Y. Aoyagi
J. Appl. Phys.
99, 064506-1-064506-5
2006



44 Charge transport of copper phthalocyanine single-crystal field-effect transistors stable above 100 degree C
K. Yamadaoichi, J. Takeya, K. Shigeto, K. Tsukagoshi, Y. Aoyagi and Y. Iwasa
Appl. Phys. Lett.
88, 122110-1-122110-3
2006



45 Interface modification of a pentacene field-effect transistor with a submicron channel
K. Tsukagoshi, K. Shigeto, I. Yagi and Y. Aoyagi
Appl. Phys. Lett.
89, 113507-1-113507-3
2006



46 ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用
塚越 一仁 ,重藤 訓志 ,Kasumov A. Y. ,川村 稔 ,青柳 克信 ,小林 知洋 ,仙波 健吾 ,兒玉 健 ,西川 浩之 ,池本 勳 ,菊地 耕一 ,Volkov V. T. ,Kasumov Y. A. ,Deblock R. ,Gueron S. ,Bouchiat H.
顕微鏡
40/ 2, 96--99
2005



47 Excitation spectroscopy of two-electron shell structures in carbon nanotube quantum dots in magnetic fields
S. Moriyama, T. Fuse, Y. Aoyagi and K. Ishibashi
Appl. Phys. Lett.
87, 073103-1-073103-3
2005



48 Importance of electron-electron interactions and Zeeman splitting in single-wall carbon nanotube quantum dots
S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi and K. Ishibashi
Physica E.
26, 473-476
2005



49 Four-electron shell structures and an interacting two-electron system in carbon-nanotube quantum dots
S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi and K. Ishibashi
Phys. Rev. Lett.
94, 186806-1-186806-4
2005



50 Design and fabrication of two-dimensional photonic crystals with predetermined nonlinear optical properties
S. Inoue and Y. Aoyagi
Phys. Rev. Lett.
94, 109304-1-109304-4
2005



51 Exclucive-OR gate using a two-input single-electron transistor in single-wall carbon nanotubes
D. Tsuya, M. Suzuki, Y. Aoyagi and K. Ishibashi
Appl. Phys. Lett.
87, 153101-1-153101-3
2005



52 Characterization and estimation of tunnel barrier height in metallic single-wall carbon nanotube quantum dots
D. Tsuya, M. Suzuki, Y. Aoyagi and K. Ishibashi
Microelectron. Eng.
82, 196-200
2005



53 Fabrication of a single-electron inverter in single-wall carbon nanotubes
D. Tsuya, M. Suzuki, Y. Aoyagi and K. Ishibashi
Jpn. J. Appl. Phys. Pt.1
44, 1588-1591
2005



54 Quantum dots and their tunnel barrier in semiconducting single-wall carbon nanotubes with a p-type behavior
D. Tsuya, M. Suzuki, Y. Aoyagi and K. Ishibashi
Jpn. J. Appl. Phys.
44, 2596-2599
2005



55 Effect of probe configuration on spin accumulation in lateral spin-valve structure
T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi and Y. Aoyagi
J. Magn. Magn. Mater.
286, 88-90
2005



56 Current distribution inside Py/Cu lateral spin-valve devices
J. Hamrle, T. Kimura, Y. Otani, K. Tsukagoshi and Y. Aoyagi
Phys. Rev. B
71, 094402-1-094402-10
2005



57 Carbon nanotube quantum dots fabricated on a GaAs/AlGaAs two-dimensional electron gas substrate
Tsukamoto Takeo, S. Moriyama, D. Tsuya, M. Suzuki, T. Yamaguchi, Y. Aoyagi and K. shibashi
J. Appl. Phys.
98, 076106-1-076106-3
2005



58 Alignment-Free Top-Contact Formation for Organic Thin Film Transistors with Submicron-Length Channel
I. Yagi, K. Shigeto, K. Tsukagoshi and Y. Aoyagi
Jpn. J. Appl. Phys. Pt.2
44, L479- L481
2005



59 Suppression of the unconventional metallic behavior by gate voltage in MWNT device
T. Kanbara, Y. Iwasa, K. Tsukagoshi and Y. Aoyagi
Physica E
29, 698-701
2005



60 ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用
塚越 一仁, 重藤 訓志, A. Y. Kasumov, 川村 稔, 青柳 克信, 小林 知洋, 仙波 健吾, 兒玉 健, 西川 浩之, 池本 勳, 菊地 耕一, V. T. Volkov, A. Y. Kasumov, R. Deblock, S. Gueron and H. Bouchiat
顕微鏡
40, 96-99
2005



61 Modification of the electric conduction at the pentacene/SiO2 interface by surface termination of SiO2
I. Yagi, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
86, 103502-1-103502-3
2005



62 Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices
T. Takenobu, T. Kanbara, N. Akima, T. Takahashi, M. I. Shira, K. Tsukagoshi, H. Kataura, Y. Aoyagi and Y. Iwasa
Adv. Mater.
17, 2430-2434
2005



63 Proximity effect in a superconductor-metallofullerene-superconductor molecular junction
A. Y. Kasumov, K. Tsukagoshi, M. Kawamura, T. Kobayashi, Y. Aoyagi, K. Senba, T. Kodama, H. Nishikawa, I. Ikemoto, K. Kikuchi, V. T. Volkov, A. Y. Kasumov, R. Deblock, S. Gueron and H. Bouchiat
Phys. Rev. B
72, 033414-1-033414-4
2005



64 Hall effect of quasi-hole gas in organic single-crystal transistors
J. Takeya, K. Tsukagoshi, Y. Aoyagi, T. Takenobu and Y. Iwasa
Jpn. J. Appl. Phys. Pt.2
44, L1393-L1396
2005



65 Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film
K. Tsukagoshi, I. Yagi, K. Shigeto, K. Yanagisawa, J. Tanabe and Y. Aoyagi
Appl. Phys. Lett.
87, 183502-1-183502-3
2005



66 ナノテクノロジーと深紫外発光素子の開発
青柳 克信 ,田中 悟 ,武内 道一 ,平山 秀樹
固体物理
39, 265--278
2004



67 Growth and annealing conditions of high Al content p-type AlGaN for deep UV-LEDs
T. Obata, H. Hirayama, Y. Aoyagi and K. Ishibashi
Phys. Status Solidi A
201, 2803-2807
2004



68 Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
S. Anceau, P. Lefebvre, T. Suski, S. P. Lepkowski, H. Teisseyre, L. H. Dmowski, L. Konczewicz, A. Kaminska, A. Suchocki, H. Hirayama and Y. Aoyagi
Phys. Status Solidi A
201, 190-194
2004



69 InAlGaN4元混晶を用いた紫外LEDの短波長化と高効率化
平山 秀樹, 秋田 勝史, 京野 孝史, 中村 孝夫, 青柳 克信
Rev. Laser Eng.
32, 402-409
2004



70 High-efficiency 352nm Quaternary InAlGaN-based Ultraviolet Light-emitting Diodes Grown on GaN Substrates
T. Obata, H. Hirayama, Y. Aoyagi and K. Ishibashi
Phys. Status Solidi A
201, 2803-2807
2004



71 Suppression of spin accumulation in nonmagnet due to ferromagnetic ohmic contact
T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
85, 3795-3796
2004



72 Domain wall drag due to dc current injection into ferromagnetic nano-wires
T. Kimura, Y. Otani, I. Yagi, K. Tsukagoshi and Y. Aoyagi
J. Magn. Magn. Mater.
0, e1347-e1348
2004



73 Non-local Hall resistance measured in submicron-scale non-magnetic/ferromagnetic junctions
T. Kimura, Y. Otani, K. Tsukagoshi and Y. Aoyagi
J. Magn. Magn. Mater.
0, e1333-e1334
2004



74 Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration
T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
85, 5382-5384
2004



75 Spin-dependent boundary resistance in the lateral spin-valve structure
T. Kimura, J. Hamrle, Y. Otani, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
85, 3501-3503
2004



76 Electrical transport in semiconducting single-wall carbon nanotubes
S. Moriyama, K. Toratani, D. Tsuya, M. Suzuki, Y. Aoyagi and K. Ishibashi
Physica E
24, 46-49
2004



77 Optical probing of spin polarization of electrons in quantum dot edge channels
S. Nomura and Y. Aoyagi
Phys. Rev. Lett.
93, 096803-1-096803-4
2004



78 Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation
K. Ozasa, Y. Aoyagi, M. Iwaki, M. Hara and M. Maeda
Ultramicroscopy
101, 55-61
2004



79 Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe identation
K. Ozasa, Y. Aoyagi, M. Hara, M. Maeda, A. Yamane and Y. Arai
Physica E
21, 265-269
2004



80 Carbon nanotubes as a building block of quantum dot devices
M. Suzuki, D. Tsuya, S. Moriyama, T. Fuse, Y. Aoyagi and K. Ishibashi
Physica E
24, 10-13
2004



81 Observation of discrete quantum levels in multi-wall carbon nanotube quantum dots
D. Tsuya, M. Suzuki, S. Moriyama, Y. Aoyagi and K. Ishibashi
Physica E
24, 50-54
2004



82 Photonic band structure and related properties of photonic crystal waveguides in nonlinear optical polymers with metallic cladding
S. Inoue and Y. Aoyagi
Phys. Rev. B
69, 205109-1-205109-6
2004



83 Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes
T. Kanbara, T. Iwasa, K. Tsukagoshi, Y. Aoyagi and Y. Iwasa
Appl. Phys. Lett.
85, 6404-6406
2004



84 Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method
I. Yagi, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
84, 813-815
2004



85 Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers
I. Yagi, K. Tsukagoshi and Y. Aoyagi
Thin Solid Films
467, 168-171
2004



86 Pentacene nanotransistor with carbon nanotube electrodes
K. Tsukagoshi, I. Yagi and Y. Aoyagi
Appl. Phys. Lett.
85, 1021-1023
2004



87 Gate-voltage dependence of zero-bias anomalies in multiwall carbon nanotubes
A. Kanda, K. Tsukagoshi, Y. Ootsuka and Y. Aoyagi
Phys. Rev. Lett.
92, 036801-1-036801-4
2004



88 Multiple layers conduction and scattering property in multi-walled carbon nanotubes
K. Tsukagoshi, E. Watanabe, I. Yagi, N. Yoneya and Y. Aoyagi
New J. Phys.
1-13
2004



89 Fabrication of Coulomb blockade device utilizing the 0.34 nm interlayer spacing in a multiwalled carbon nanotube
E. Watanabe, K. Tsukagoshi, I. Yagi and Y. Aoyagi
Microelectron. Eng.
0, 666-669
2004



90 The formation of nanometer-scale gaps by electrical degradation and their application to C60 transport measurements
K. Tsukagoshi, E. Watanabe, I. Yagi and Y. Aoyagi
Microelectron. Eng.
0, 686-688
2004



91 Carbon nanotubes with a nanogap for nanoscale organic devices
I. Yagi, K. Tsukagoshi, E. Watanabe and Y. Aoyagi
Microelectron. Eng.
65, 675-678
2004



92 Determination of built-in electric fields in quaternary InAlGaN heterostructures
H. Teisseyre, T. Suski, S. P. Lepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Konczewicz, H. Hirayama and Y. Aoyagi
Appl. Phys. Lett.
82, 1541-1543
2003



93 Low temperature transport in single and coupled quantum dots in single-wall carbon nanotubes
K. Ishibashi, M. Suzuki, K. Toratani, T. Ida and Y. Aoyagi
Physica E
16, 35-41
2003



94 Fabrication of single electron transistors in multi-wall carbon nanotubes by using Ar beam irradiation
K. Ishibashi, D. Tsuya, M. Suzuki and Y. Aoyagi
Microelectron. Eng.
0, 749-754
2003



95 Effect of the large current flow on the low-temperature transport properties in a bundle of single-wall carbon nanotubes
T. Fuse, S. Moriyama, M. Suzuki, Y. Aoyagi and K. Ishibashi
Appl. Phys. Lett.
83, 3803-3805
2003



96 Fabrication of a single-electron inverter in multiwall carbon nanotubes
K. Ishibashi, D. Tsuya, M. Suzuki and Y. Aoyagi
Appl. Phys. Lett.
82, 3307-3309
2003



97 Local Ar beam irradiation for making tunneling barriers and its application to single electron inverter in multi-wall carbon nanotubes
D. Tsuya, K. Ishibashi, M. Suzuki and Y. Aoyagi
Physica E
19, 157-160
2003



98 Density of states of a quantum dot array probed by photoluminescence spectra
S. Nomura and Y. Aoyagi
Surf. Sci.
529, 171-179
2003



99 Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation
T. Meguro, A. Hida, Y. Kguchi, S. Miyamoto, Y. Yamamoto, H. Takai, K. Maeda and Y. Aoyagi
Nucl. Instrum. Methods Phys. Res. B
209, 170-174
2003



100 Analysis of surface modifications on graphite induced by slow highly charged ion impact
A. Hida, T. Meguro, K. Maeda and Y. Aoyagi
Nucl. Instrum. Methods Phys. Res. B
205, 736-740
2003



101 Modification of highly oriented pyrolytic graphite (HOPG) surfaces with highly charged ion (HCI) irradiatio
Y. Kguchi, T. Meguro, A. Hida, H. Takai, K. Maeda, Y. Yamamoto and Y. Aoyagi
Nucl. Instrum. Methods Phys. Res. B
206, 202-205
2003



102 埋め込み量子ドット界面のサイト選択的X線吸収測定
石井 真史, 尾笹 一成, 青柳 克信
Journal of the Society of Materials Science Japan
52, 1405-1409
2003



103 Near-field optical mapping of exciton wave functions in a GaAs quantum dot
K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi, S. Nair and T. Takagahara
Phys. Rev. Lett.
91, 177401-1-177401-4
2003



104 Real-space mapping of exciton wave function in a GaAs quantum dot by near-field optical imaging spectroscopy
K. Matsuda, T. Saiki, Y. Aoyagi, M. Mihara and S. Nomura
Phys. Status Solidi B
238, 285-288
2003



105 Facets, indium distribution, and lattice distortion of InGaAs/GaAs quantum dots observed by three-dimensional scanning transmission electron microscope
K. Ozasa, Y. Aoyagi, M. Iwaki and H. Kurata
J. Appl. Phys.
94, 313-317
2003



106 Multi-azimuth 360 degrees observation of quantum nanostructures by scanning transmission electron microscopy
K. Ozasa, Y. Aoyagi and M. Iwaki
J. Mater. Sci. Lett.
22, 273-277
2003



107 Selective X-ray absorption spectroscopy of self-assembled atom in InAs quantum dot
M. Ishii, K. Ozasa and Y. Aoyagi
Microelectron. Eng.
64, 955-962
2003



108 Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects
K. Ozasa, Y. Aoyagi, A. Yamane and Y. Arai
Appl. Phys. Lett.
83, 2247-2249
2003



109 Spin-current-assisted domain-wall depinning in a submicron magnetic wire
T. Kimura, Y. Otani, K. Tsukagoshi and Y. Aoyagi
J. Appl. Phys.
94, 7947-7949
2003



110 Suppressed pinning field of a trapped domain wall due to direct current injection
T. Kimura, Y. Otani, I. Yagi, K. Tsukagoshi and Y. Aoyagi
J. Appl. Phys.
94, 7266-7269
2003



111 Superconducting SET with tunable electromagnetic environment
M. Watanabe, K. Ishibashi and Y. Aoyagi
Physica E
18, 25-26
2003



112 Microassembly of semiconductor three-dimensional photonic crystals
K. Aoki, H. T. Miyazaki, H. Hirayama, K. Inoshita, T. Baba, K. Sakoda, N. Shinya and Y. Aoyagi
Nat. Mater.
2, 117-121
2003



113 High-yield production of single-wall carbon nanotubes in nitrogen gas
D. Nishida, H. Kataura, S. Suzuki, K. Tsukagoshi, Y. Aoyagi and Y. Achiba
Chem. Phys. Lett.
372, 45-50
2003



114 Catalytic growth of carbon nanotubes and their patterning based on ink-jet and lithographic techniques
H. Ago, J. Qi, K. Tsukagoshi, S. Ohshima, Y. Aoyagi and M. Yumura
J. Electroanal. Chem.
559, 25-30
2003



115 Coulomb blockade oscillation in a multiwalled carbon nanotube with internanotube tunnel junctions
E. Watanabe, K. Tsukagoshi, Kanai Dai, I. Yagi and Y. Aoyagi
Appl. Phys. Lett.
83, 1429-1431
2003



116 Two-electron and four-electron periodicity in single-wall carbon nanotube quantum dots
T. Fuse, S. Moriyama, Y. Aoyagi, M. Suzuki and K. Ishibashi
Superlattices Microstruct.
34, 377-382
2003



117 Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N
Jun Byung Hyuk, H. Hirayama and Y. Aoyagi
Jpn. J. Appl. Phys. Pt.1
41, 581-582
2002



118 Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters
H. Hirayama, T. Yamanaka, K. Hiraoka, A. Hirata and Y. Aoyagi
Mat. Res. Soc. Symp. Proc.
693, I4.10.1
2002



119 Small built-in electric fields in quaternary InAlGaN heterostructures
H. Teisseyre, T. Suski, S. P. Lepkowski, S. Anceau, P. Perlin, P. Lefebvre, L. Konczewicz, H. Hirayama and Y. Aoyagi
Phys. Status Solidi B
234, 764-768
2002



120 Efficient 230-280nm emission from high-Al-content AlGaN-based multiquantum wells
H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 37-39
2002



121 Fabrication of a low-threading-dislocation-density AlxGa1-xN buffer on SiC using highly Si-doped AlxGa1-xN superlattices
H. Hirayama, M. Ainoya, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 2057-2059
2002



122 Room-temperature intense 320nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 1589-1591
2002



123 Marked enhancement of 320-360nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect
H. Hirayama, A. Kinoshita, T. Yamabi, Y. Enomoto, A. Hirata, T. Araki, Y. Nanishi and Y. Aoyagi
Appl. Phys. Lett.
80, 207-209
2002



124 Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy
K. Kawasaki, I. Nakamatsu, H. Hirayama, K. Tsutsui and Y.Aoyagi
J. Cryst. Growth
243, 129-133
2002



125 Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N
B. Jun, H. Hirayama and Y. Aoyagi
Jpn. J. Appl. Phys.
41, 581-582
2002



126 Growth of AlN-SiC solid solutions by sequential supply epitaxy
A. S. Avramescu, H. Hirayama, Y. Aoyagi and S. Tanaka
J. Crystal Growth
234, 435-439
2002



127 Fabrication of a low-threading-dislocation-density AlxGa1-xN buffer on SiC using highly Si-doped AlxGa1-xN superlattices
H. Hirayama, M. Ainoya, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 2057-2059
2002



128 Room-temperature intense 320nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 1589-1591
2002



129 Marked enhancement of 320-360nm ultraviolet emission in quaternary InxAyGa1-x-yN with In-segregation effect
H. Hirayama, A. Kinoshita, T. Yamabi, Y. Enomoto, A. Hirata, T. Araki, Y. Nanishi and Y. Aoyagi
Appl. Phys. Lett.
80, 207-209
2002



130 Efficient 230-280nm emission from high-Al-content Al-GaN-based multiquantum wells
H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
80, 37-39
2002



131 Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule
N. Aoki, D. Oonishi, Y. Iwase, Y. Ochiai, K. Ishibashi, Y. Aoyagi and J. P. Bird
Appl. Phys. Lett.
80, 2970-2972
2002



132 Classical microwave response of coupled quantum dots in single-wall carbon nanotubes
K. Ishibashi, M. Suzuki, T. Ida and Y. Aoyagi
Appl. Phys. Lett.
80, 4238-4240
2002



133 A drastic change of the effective g-value in nanostructure system: Zeeman attenuator
N. Aoki, L. H. Lin, D. Oonishi, M. Kida, Y. Iwase., K. Ishibashi, Y. Aoyagi, J. P. Bird, D. K. Ferry, J. Oswald and Y. Ochiai
Physica B
314, 235-238
2002



134 Tunnel barrier formation using argon-ion irradiation and single quantum dots in multiwall carbon nanotubes
M. Suzuki, K. Ishibashi, K. Toratani, D. Tsuya and Y. Aoyagi
Appl. Phys. Lett.
81, 2273-2275
2002



135 Low temperature conductance fluctuations in double-dot system
N. Aoki, Onishi Daisuke, Y. Iwase, K. Ishibashi, Y. Aoyagi and Y. Ochiai
Microelectron. Eng.
63, 57-61
2002



136 Non-weak-localization signature in the average conductance of open quantum-dot arrays
A. Shailos, C. Prasad, M. Elhassan, J. P. Bird, R. Akis, D. K. Ferry, L. H. Lin, N. Aoki, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Physica E
12, 630-633
2002



137 Can Kondo-loke behavior occur in open quantum dots?
J. P. Bird, A. Shailos, M. Elhassan, C. Prasad, K. M. Indlekofer, L. Shifren, R. Akis, D. K. Ferry, L. H. Lin, N. Aoki, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Microelectron. Eng.
63, 277-286
2002



138 Numerical simulations of magneto transport in dot array systems at high magnetic fields
J. Oswald, Y. Ochiai, N. Aoki, L. H. Lin, K. Ishibashi, Y. Aoyagi, J. P. Bird and D. K. Ferry
Microelectron. Eng.
63, 91-95
2002



139 Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm
K. Matsuda, T. Saiki, S. Nomura, M. Mihara and Y. Aoyagi
Appl. Phys. Lett.
81, 2291-2293
2002



140 Near-field scanning optical microscopy of quantum dot arrays
S. Nomura, K. Matsuda, T. Saiki and Y. Aoyagi
Jpn. J. Appl. Phys. Pt.1
41, 2668-2670
2002



141 Magnetic field dependence of Coulomb oscillations in metal/multi-wall carbon nanotube/metal structures
A. Kanda, S. Uryu, K. Tsukagoshi, Y. Ootsuka and Y. Aoyagi
Physica B
323, 246-248
2002



142 Three-dimensional photonic crystals for optical wavelengths assembled by micromanipulation
K. Aoki, H. T. Miyazaki, H. Hirayama, K. Inoshita, T. Baba, N. Shinya and Y. Aoyagi
Appl. Phys. Lett
81, 3122-3124
2002



143 Non-weak-localization signature in the average conductance of open quantum-dot arrays
A. Shailos, C. Prasad, M. Elhassan, J. P. Bird, R. Akis, D. K. Ferry, L.-H. Lin, N. Aoki, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Physica E
12, 630-633
2002



144 The dependence of fractal conductance fluctuations on semiconductor billiard parameters
A. P. Micolich, R. P. Taylor, R. Newbury, J. P. Bird, T. M. Fromhold, A. G. Davies, L. D. Macks, A. Ehlert, H. Linke, W. R. Tribe, E. H. Linfield, D. A. Ritchie, J. Cooper, Y. Aoyagi and P. B. Wilkinson
Physica B
314, 477-480
2002



145 Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule
N. Aoki, D. Oonishi, Y. Iwase, Y. Ochiai, K. Ishibashi, Y. Aoyagi and J.P. Bird
Appl. Phys. Lett.
80, 2970-2972
2002



146 Interaction of electromagnetic wave with quantum dots
K. Ishibashi and Y. Aoyagi
Physica B
314, 437-443
2002



147 Single and coupled quantum dots in single-wall carbon nanotubes
K. Ishibashi, M. Suzuki, S. Moriyama, T. Ida and Y. Aoyagi
Superlattices Microstruct.
31, 141-149
2002



148 Charge transfer control by gate voltage in crossed nanotube junction
N. Yoneya, K. Tsukagoshi and Y. Aoyagi
Appl. Phys. Lett.
81, 2250-2252
2002



149 Resistance dependence of transport properties in metal-multiwall carbon nanotube-metal structures
A. Kanda, K. Tsukagoshi, S. Uryu, Y. Ootsuka and Y. Aoyagi
Microelectron. Eng.
63, 33-37
2002



150 Carbon nanotube devices for nanoelectronics
K. Tsukagoshi, N. Yoneya, S. Uryu, Y. Aoyagi, A. Kanda, Y. Ootsuka and B. W. Alphenarr
Physica B
323, 107-114
2002



151 X-ray excited optical luminescence of impurity atom in semiconductor
M. Ishii, Y. Tanaka, S. Komuro, T. Morikawa, Y. Aoyagi, T. Ishikawa
J. Synchrotron Rad.
8, 372-374
2001



152 X-ray-excited optical luminescence of erbium-doped semiconductor: Site selective X-ray absorption spectroscopy of an optically active atom
M. Ishii, Y. Tanaka, S. Komuro, T. Morikawa, Y. Aoyagi, T. Ishikawa
J. Electron Spectrosc. Relat. Phenom.
114・116, 521-525
2001



153 GaN quantum dot formation by self-assembling droplet epitaxy and application to single-electron transistors
K. Kawasaki, D. Yamazaki, A. Kinoshita, H. Hirayama, K. Tsutsui and Y. Aoyagi
Appl. Phys. Lett.
79, 2243-2245
2001



154 Quantum dot formation and crystal growth using an atomic nano-mask
Y. Aoyagi, S. Tanaka, H. Hirayama and M. Takeuchi
Physica E
11, 89-93
2001



155 GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser
T. Akane, K. Sugioka, K. Hammura, Y. Aoyagi, K. Midorikawa, K. Obata, K. Toyoda and S. Nomura
J. Vac. Sci. Technol. B
19, 1388-1391
2001



156 InAlGaN 4元混晶を用いた330-350nm帯高効率紫外LED
平山秀樹, 木下敦寛, 相野谷誠, 山火孝義, 山中卓也, 平田彰, 青柳克信
信学技報
ED2001-134/ CPM 2001-87, 49-55
2001



157 Growth and optical properties of quarternary InAlGaN for 300nm-band UV-emitting devices
H. Hirayama, A. Kinoshita, A. Hirata and Y. Aoyagi
Phys. Status Solidi A
188, 83-89
2001



158 GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser
T. Akane, K. Sugioka, K. Hammura, Y. Aoyagi, K. Midorikawa, K. Obata, K. Toyoda and S. Nomura
J. Vac. Sci. Technol. B
19, 1388-1391
2001



159 Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC(0001) surfaces
S. Yamada, J. Kato, S. Tanaka, I. Suemune, A.S. Avramescu, Y. Aoyagi, N. Teraguchi and A. Suzuki
Appl. Phys. Lett.
78, 3612-3614
2001



160 Resonant raman scattering on self-assembled GaN quantum dots
M. Kuball, J. Gleize, S. Tanaka and Y. Aoyagi
Appl. Phys. Lett.
78, 987-989
2001



161 Current injection UV-emission from InAlGaN multi-quantum-well light emitting diodes
A. Kinoshita, H. Hideki, M. Ainoya, T. Yamabi, A. Hirata and Y. Aoyagi
MRS GaN and Related Alloys-2000
639, G 12.6
2001



162 Electronic structure of Ag-induced √3 x √3 and √21 x √21 superstructures on the Si(111) surface studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy
X. Tong, S. Ohuchi, N. Sato, T. Tanikawa, T. Nagao, I. Matsuda, Y. Aoyagi and S. Hasegawa
Phys. Rev. B
64, 205316-1-205316-4
2001



163 Observation of Coulomb blockade in a Ti/multiwall carbon nanotube/Ti structure
A. Kanda, K. Tsukagoshi, Y. Ootsuka and Y. Aoyagi
Nanonetwork Materials
265-278
2001



164 Pressure effects on nanoprobe photoluminescence of quasi-zero-dimensional confinement quantum dot
K. Ozasa, S. Nomura and Y. Aoyagi
Superlattices Microstruct.
30, 169-179
2001



165 Magneto-conductance oscillations in open dot arrays
M. Elhassan, A. Shailos, C. Prasad, J. P. Bird, D.K. Ferry, L. Lin, N. Aoki, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Phys. Status Solidi B
224, 711-714
2001



166 Signature of discrete level spectrum in temperature-dependent transport through open quantum-dot arrays
A. Shailos, C. Prasad, M. Elhassan, R. Akis, D.K. Ferry, J. P. Bird, N. Aoki, L. Lin, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Phys. Rev. B
64, 193302-1-193302-4
2001



167 Coupling-driven transition from multiple to single-dot interference in open quantum-dot arrays
M. Elhassan, J. P. Bird, A. Shailos, C. Prasad, R. Akis, D. K. Ferry, Y. Takagaki, L. Lin, N. Aoki, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Phys. Rev. B
64, 085325-1-085325-7
2001



168 Confinement-induced enhancement of electron-electron interactions in open quantum-dot arrays
A. Shailos, J. P. Bird, C. Prasad, M. Elhassan, L. Shifren, D. K. Ferry, L. Lin, N. Aoki, Y. Ochiai, K. Ishibashi, Y. Aoyagi
Phys. Rev. B
63, 241302-1-241302-4
2001



169 Fermi-edge singularities in photoluminescence spectra of n-type modulation-doped quantum wells with a lateral periodic potential
S. Nomura, T. Nakanishi and Y. Aoyagi
Phys. Rev. B
63, 165330-1-165330-6
2001



170 Photoluminescence of InGaAs (P) dots with quasi-zero-dimensional confinement
K. Ozasa, S. Nomura, M. Takeuchi and Y. Aoyagi
Mater. Sci. Eng. B
86, 34-40
2001



171 Beating of Shubnikov-de Haas oscillations in GaAs/AlGaAs quantum-dot arrays
Y. Ochiai, N. Aoki, L. Lin, A. Andressen, C. Prasad, F. Ge, J. P. Bird, D. K. Ferry, T. Risaki, K. Ishibashi, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
40, 1990-1993
2001



172 Nanoscale modification of electronic state of graphite by highly charged Ar-ion irradiation
T. Meguro, A. Hida, M. Suzuki, Y. Koguchi, H. Takai, Y. Yamamoto, K. Maeda and Y. Aoyagi
J. Vac. Sci. Technol. B
19, 2745-2748
2001



173 Creation of nanodiamonds by the single impacts of highly charged ions upon graphite
T. Meguro, A. Hida, M. Suzuki, Y. Koguchi, H. Takai, Y. Yamamoto, K. Maeda, Y. Aoyagi
Appl. Phys. Lett.
79, 3866-3868
2001



174 Electron transport in metal/multiwall carbon nanotube/metal structures (metal=Ti or Pt/Au)
A. Kanda, Y. Ootsuka, K. Tsukakoshi, Y. Aoyagi
Appl. Phys. Lett.
79, 1354-1356
2001



175 Single-electron charging in a parallel dot structure
T. H. Wang, Y. Aoyagi
Appl. Phys. Lett.
78, 634-636
2001



176 Design of an ultrahigh-gain Ni-like Kr soft X-ray laser by use of an optical-field-induced ionization-initiated transient collisional excitation scheme
O. Maya, Y. Nagata, M. Obara, Y. Aoyagi, K. Midorikawa
Jpn. J. Appl. Phys.
40, 153-158
2001



177 Quantum dot formation in single-wall carbon nanotubes
M. Suzuki, K. Ishibashi, T. Ida, Y. Aoyagi
Jpn. J. Appl. Phys.
40, 1915-1917
2001



178 Fabrication of single and coupled quantum dots in single-wall carbon nanotubes
M. Suzuki, K. Ishibashi, T. Ida, D. Tsuya, K. Toratani, Y. Aoyagi
J. Vac. Sci. Technol.B
19, 2770-2774
2001



179 Formation of coupled quantum dots in single-wall carbon nanotubes
K. Ishibashi, M. Suzuki, T. Ida, Y. Aoyagi
Appl. Phys. Lett.
79, 1864-1866
2001



180 Coulomb blockade in multiwalled carbon nanotube island with nanotube leads
N. Yoneya, E. Watanabe, K. Tsukakoshi, Y. Aoyagi
Appl. Phys. Lett.
79, 1465-1467
2001



181 Anti-surfactant in III-nitride epitaxy: Quantum dot formation and dislocation termination
S. Tanaka, M. Takeuchi and Y Aoyagi
Jpn. J. Appl. Phys.
39, L831-L834
2000



182 F2 laser etching of GaN
T. Akane, K. Sugioka, S. Nomura, K. Hammura, N. Aoki, K. Toyoda and Y. Aoyagi
Appl. Surf. Sci.
168, 335-339
2000



183 Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodew with Mg-doped superlattice layers
A. Kinoshita, H. Hirayama, M. Ainoya, A. Hirata and Y. Aoyagi
Appl. Phys. Lett.
77, 175-177
2000



184 Current injection emission at 333nm from Al0.03Ga0.97N/Al0.25Ga 0.75N multi quantum well ultraviolet light emitting diodes
A. Kinoshita, H. Hideki, J.S. Kim, M. Ainoya, A. Hirata and Y. Aoyagi
Phys. Status Solidi (a)
180, 397-401
2000



185 230-250 nm intense emission from AIN/AlGaN quantum wells
H. Hirayama, K. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi
Phys. Status Solidi (a)
180, 157-163
2000



186 Investigations of optical and electrical properties of In-doped GaN films by gas-source molecular beam epitaxy
X. Q. Shen, P. Ramvall, P. Riblet, Y. Aoyagi, K. Hoshi, S. Tanaka and I. Suemune
J. Cryst. Growth
209, 396-400
2000



187 Optical properties of GaN quantum dots
P. Ramvall, P. Riblet, S. Nomura, Y. Aoyagi and S. Tanaka
J. Appl. Phys.
87, 3883-3890
2000



188 Doping-dependent optical gain in GaN
P. Ramvall, Y. Aoyagi, A. Kuramata, P. Hacke, K. Domen and K. Horino
Appl. Phys. Lett.
76, 2994-2996
2000



189 Metal-insulator transition in quantum dot arrays
A. Shailos, M. E. Hassan, C. Prasad, J.P. Bird, D. K. Ferry, L.-H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano
Superlattices Microstruct.
27, 311-314
2000



190 Quantum dots in carbon nanotubes
K. Ishibashi, T. Ida, M. Suzuki, K. Tsukagoshi and Y. Aoyagi
Jpn. J. Appl. Phys.
39, 7053-7057
2000



191 Scanning tunneling microscopy evidence of a special bounding of Cu adatoms on Si(111)- 3 x 3-Ag surface Diect observation of surface-state electron migration
X. Tong, T. Shiokawa, K. Hammura and Y. Aoyagi
Surf. Sci.
446, L120-L126
2000



192 Evidence for a reentrant metal-insulator transition in quantum-dot arrays
A. Andresen, C. Prasad, F. Ge, L-H. Lin, N. Aoki, K. Nakao, J. P. Bird, D. K. Ferry, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. Rev. B
60, 16050-16057
2000



193 Magneto-transport in corrugated quantum wires
L-H. Lin, N. Aoki, K. Nakao, K. Ishibashi, Y. Aoyagi, T. Sugano, N. Holmberg, D. Vasileska, R. Akis, J. P. Bird, D. K. Ferry and Y. Ochiai
Physica E
7, 750-755
2000



194 Temperature dependence of photoluminescence spectrain n-type modulation-doped quantum dot arrays
S. Nomura, T. Sugano and Y. Aoyagi
Physica E
7, 466-469
2000



195 Signature of coherent electron transport in open dot arrays
J. P. Bird, A. Shailos, M. Elhassan, C. Prasad, D. K. Ferry, L-H Lin, N. Aoki, Y. Ochiai, K. Ishibashi, Y. Aoyagi
Nanotechnology
11, 365-369
2000



196 Temperature and size dependence of fractal MCF in semiconductor billiards
A. P. Micolich, R. P. Taylor, J. P. Bird, R. Newbury, T. M. Fromhold, C. R. Tench, H. Linke, Y. Aoyagi and T. Sugano
Microelec. Eng.
51・52, 241-247
2000



197 Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG
K. Ishibashi, T. Ida, H. Kotani, Y. Ochiai, T. Sugano and Y. Aoyagi
Microelectron. Eng.
47, 185-187
2000



198 Formation and device application of Er-doped nanocrystalline Si using laser ablation
X. Zhao, H. Isshiki, Y. Aoyagi, T. Sugano and S. Komuro
Mat. Sci. Eng. B
74, 197-201
2000



199 Insulating state in open quantum dots and quantum dot arrays
F. Ge, C. Prasad, A. Andressen, J. P. Bird, D. K. Ferry, L-H. Lin, N. Aoki, K. Nakao, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Ann. Phys.
9, 65-68
2000



200 Observation of excited level populations of Li-like aluminum ions in recombining plasma: Role of atomic processes involving doubly excited levels of Be-like ions
T. Kawachi, K. Ando, C. Fujikawa, H. Oyama, N. Yamaguchi, T. Hara and Y. Aoyagi
J. Phys. B: At. Mol. Opt. Phys.
32, 553-562
1999



201 XANES analysis of optical activation process of Er in Si:Er2O3 thin film: Electronic and structural modifications around Er
M. Ishii, S. Komuro, T. Morikawa, Y. Aoyagi, T. Ishikawa, T. Ueki
Jpn. J. Appl. Phys.
38, 191-194
1999



202 Size-dependent optical nonlinearities in GaN quantum dots
P. Riblet, S. Tanaka, P. Ramvall, S. Nomura and Y Aoyagi
Solid State Commun.
109, 377-381
1999



203 Optical properties of Si-doped AlxGa1-xN/AlyGa1-yN(x=0.24-0.53, y=0.11) multi-quantum structures
H. Hirayama and Y. Aoyagi
MRS Internet J. Nitride Semicond. Res. SUPPL.
1, 6d
1999



204 Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant
H. Hirayama, Y. Aoyagi and S. Tanaka
MRS Internet J. Nitride Semicond. Res. SUPPL.
1, 6d
1999



205 Fabrication of self-assembling InGaN and AlGaN quantum dot on AlGaN surfaces using anti-surfactant
H. Hirayama, S. Tanaka, and Y. Aoyagi
Microelectron. Eng.
49, 287-290
1999



206 Improvements of the optical and electrical properties of GaN films by using In-doping method during growth
X. Q. Shen, P. Ramvall, P. Riblet and Y. Aoyagi
Jpn. J. Appl. Phys.
38, L411-L413
1999



207 An approach to achieve intense photoluminescence of GaN
X.Q.Shen and Y. Aoyagi
Jpn. J. Appl. Phys.
38, L14-L16
1999



208 Effect of indium doping on the transient optical properties of GaN films
H. Kumano, K. Hoshi, S. Tanaka, I. Suemune, X.Q.Shen, P. Riblet, P. Ramvall and Y. Aoyagi
Appl. Phys. Lett.
75, 2879-2881
1999



209 Determination of photoluminescence mechanism in InGaN quantum wells
P. Riblet, H. Hirayama, A. Kinoshita, A. Hirata, T. Sugano and Y. Aoyagi
Appl. Phys. Lett.
75, 2241-2243
1999



210 Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction
P. Ramvall, Y. Aoyagi, A. Kuramata, P. Hacke and K. Horino
Appl. Phys. Lett.
74, 3866-3868
1999



211 Optical characterization of the "E2" deep level in GaN
P. Hacke, P. Ramvall, S. Tanaka, Y. Aoyagi, A. Kuramata, K. Horino and H. Munekata
Appl. Phys. Lett.
74, 543-545
1999



212 Probing the discrete level spectrum of open quantum dots
J. P. Bird, R. Akis, D. K. Ferry, J. Cooper, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
38, 322-324
1999



213 Temperature dependent fractal dimension of magneto-conductance fluctuations in semiconductor billiards
A. P. Micolich, A. P. Taylor, R. Newbury, J. P. Bird, Y. Aoyagi, T. Sugano
Superl. Microstr.
25, 157-163
1999



214 Lead-orientation-dependent wave function scarring in open quantum dots
J.P. Bird, R. Akis, D.K. Ferry, D. Vasileska, J. Cooper, Y. Aoyagi and T. Sugano
Phys. Rev. Lett
82, 4691-4694
1999



215 Localization effect in mesoscopic quantum dots and quantum-dot arrays
L-H. Lin, N. Aoki, K. Nakao, A. Andresen, C. Prasad, F. Ge, J. P. Bird, D. K. Ferry, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. Rev. B
60, R16299-R16302
1999



216 Quantum-size effect in model nanocrystalline/amorphous mixed-phase silicon structures
S. Nomura, T. Iitaka, X. Zhao, T. Sugano and Y. Aoyagi
Phys. Rev. B
59, 10309-10314
1999



217 Single electron tunneling devices
A. Kanda, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. and Appl. of Mesoscopic Josephson Junctions
305-323
1999



218 Magnetotransport in an InAs/AlGaSb quantum wire with a weak periodic potential
T. Maemoto, M. Ichiu, A. Ohya, S. Sasa, M. Inoue, K. Ishibashi and Y. Aoyagi
Physica B
272, 110-113
1999



219 Hot carrier scaling of localization in a quantum dot array
L-H. Lin, N. Aoki, K. Nakao, A. Andresen, C. Prasad, F. Ge, J. P. Bird, D. K. Ferry, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Physica B
272, 49-52
1999



220 Phenomenological theory of the Rabi oscillation in coupled quantum dots
T. Aono, K. Ishibashi and Y. Aoyagi
Physica B.
272, 39-41
1999



221 Energy gap measurement in ultrasmall superconducting rings
A. Kanda, M. C. Geisler, K. Ishibashi, Y. Aoyagi and T. Sugano
Microelectron. Eng.
47, 389-391
1999



222 Focused multi-peaks in gated ballistic wires
L-H Lin, Y. Ochiai, K. Ishibashi, Y. Aoyagi, T. Sugano, J. P. Bird, N. L. Holmberg, D. Vasileska, R. Akis and D. K. Ferry
Microelectron. Eng.
47, 155-157
1999



223 Photoluminescence and optical transition dynamics of Er3+ ions in porous Si
X. Zhao, S. Komuro, H. Isshiki, Y. Aoyagi and T. Sugano
J. Mater. Sci. Technol.
15, 357-362
1999



224 Dynamics of superradiant excitons in GaAs single quantum wells
P. Vledder, A.V. Akimov, J. I. Dijkhuis, J. Kusano, Y. Aoyagi and T. Sugano
J. Lumines.
83, 309-312
1999



225 In situ control of strain-induced dot structure by arsenic/phosphorus replacement
K. Ozasa and Y. Aoyagi
J. Electron. Mater.
28, 437-441
1999



226 Modeling of electron transport in corrugated quantum wires
Y. Ochiai, L. H. Lin, K. Ishibashi, Y. Aoyagi, T. Sugano, N. L. Holmberg, J. P. Bird, D. Vasileska, R. Akis and D. K. Ferry
Jpn. J. Appl. Phys.
38, 325-327
1999



227 Metalorganic vapor phase epitaxy of manganese gallide thin films and growth temperature dependence of its crystal structure
M. Ishii, S. Iwai, T. Ueki, and Y. Aoyagi
J. Crystal Growth
187, 234-239
1998



228 Calculating the density of states and the linear response functions with time-dependent Schrodinger equations
T. Iitaka, S. Nomura, H. Hirayama, X. Zhao, Y. Aoyagi and T. Sugano
Microelectron. Eng.
43・44, 459-470
1998



229 Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy
X. Q. Shen, S. Tanaka, S. Iwai and Y. Aoyagi
J. Cryst. Growth
189, 147-152
1998



230 In situ composition control of self-organized InGaAs dots
K. Ozasa and Y. Aoyagi
J. Cryst. Growth
188, 370-376
1998



231 Chemical beam epitaxy of GaN using triethylgallium and ammonia
X. Q. Shen, S. Tanaka, S. Iwai and Y. Aoyagi
J. Cryst. Growth
188, 86-91
1998



232 Influences of surface V/III ration on the film quality during the GaN growth in gas-source molecular beam epitaxy
X. Q. Shen, S. Tanaka, S. Iwai and Y. Aoyagi
Jpn. J. Appl. Phys.
37, L637-L639
1998



233 Observation of confinement-dependent exciton binding energy of GaN quantum dots
R. Ramvall, S. Tanaka, S. Nomura, P. Riblet and Y. Aoyagi
Appl. Phys. Lett.
73, 1104-1106
1998



234 The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy
X. Q. Shen, S. Tanaka, S. Iwai and Y. Aoyagi
Appl. Phys. Lett.
73, 344-346
1998



235 Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
H. Hirayama, S. Tanaka, P. Ramvall and Y. Aoyagi
Appl. Phys. Lett.
72, 1736-1738
1998



236 Surface reaction mechanism and morphology control in AIP atomic layer epitaxy
M. Ishii, S. Iwai, T. Ueki and Y. Aoyagi
Thin Sol. Films
318, 6-10
1998



237 The influence of environmental coupling on phase breaking in open quantum dots
J. P. Bird, A. P. Micolich, D. K. Ferry, R. Akis, Y. Ochiai, Y. Aoyagi and T. Sugano
Solid State Elec.
42, 1281-1285
1998



238 Wavefunction scarring and classical commensurability in corrugated quantum wires
Y. Ochiai, K. Yamamoto, J.P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano, R. Akis and D. K. Ferry
Solid State Elec.
42, 1125-1130
1998



239 Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot arrays
S. Nomura, T. Sugano and Y. Aoyagi
Solid State Commun.
106, 815-819
1998



240 Scale factor mapping of statistical and exact self-similarity in billiards
A. P. Micolich, R. P. Taylor, J. P. Bird, R. Newbury, T. M. Fromhold, J. Cooper. Y. Aoyagi, T. Sugano
Semicond. Sci. Technol.
13, A41-A43
1998



241 Low temperature magnetotransport in ballistic quantum dots and wires
Y. Ochiai, L. H. Lin, K. Yamamoto, K. Ishibashi, Y. Aoyagi, T. Sugano, J. P. Bird, D. Vasileska, R. Akis and D. K. Ferry
Semicond. Sci. Technol.
13, A15-A17
1998



242 Intrinsic stable orbits in open quantum dots
J. P. Bird, R. Akis, D. K. Ferry, J. Cooper, K. Ishibashi, Y. Ochiai, Y. Aoyagi and T. Sugano
Semicond. Sci. Technol.
13, A4-A6
1998



243 Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation
S. Nomura, L. Samuelson, C. Pryor, M. E.Pistol, M. Stopa, K. Uchida, N. Miura, T. Sugano and Y. Aoyagi
Phys. Rev. B
58, 6744-6747
1998



244 Magnetoluminescence of self-assembled InP dots with varying sizes
B. Kowalski, S. Nomura, C. Pryor, Y. Aoyagi, N. Carlsson, M. E. Pistol, P. Omling, L. Samuelson and W. Seifert
Phys. Rev. B
58, 2026-2030
1998



245 High-magnetic-field-induced large blueshift and depopulation of a quasi-one-dimensional electron-hole system in p-type modulation-doped semiconductor quantum wires
S. Nomura, H. Isshiki, Y. Aoyagi, T. Sugano, K. Uchida and N. Miura
Phys. Rev. B
57, 2407-2414
1998



246 Phase coherent and incoherent backscattering of electron waves in corrugation gated quantum wires
Y. Ochiai, A.W. Widjaja, K. Yamamoto, J.P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano, R. Akis and D. K. Ferry
Phys. Low-Dim. Struct.
1・2, 109-116
1998



247 Wave function scarring and magnetotransport in quantum dots
Y. Ochiai, Y. Okubo, N. Sasaki, J. P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano, A. P. Micolich, R. P. Taylor, R. Newbury, D. Vasileska, R. Akis and D. K. Ferry
Physica B
249・251, 353-357
1998



248 Geometry-induced fractal behaviour: Fractional Brownian motion in a ballistic mesoscopic billiard
A. P. Micolich, R. P. Taylor, R. Newbury, J. P. Bird, R. Wirtz, T. M. Fromhold, Y. Aoyagi and T. Sugano
Physica B
249・251, 343-347
1998



249 Periodically recurring wave function scarring and magneto transport in quantum dots
Y. Okubo, N. Sasaki, Y. Ochiai, J.P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano, D. Vasileska, R. Akis and D.K. Ferry
Physica B
246・347, 266-269
1998



250 (GaAs)m(GaO)n low dimensional short-period superlattice fabricated by atomic layer epitaxy
H. Isshiki, Y. Aoyagi and T. Sugano
Microelectron. Eng.
43, 301-307
1998



251 Surface structure change between InGaAs dots and InGaAsP flat surface induced by in situ arsenic/phosphorus replacement
K. Ozasa and Y. Aoyagi
Microelectron. Eng.
43, 3-10
1998



252 Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping
X. Zhao, S. Komuro, S. Fujita, H. Isshiki, Y. Aoyagi and T. Sugano
Mater. Sci. Eng. B
51, 154-157
1998



253 Electronic structure of nanocrystalline/amorphous silicon: A novel quantum size effect
S. Nomura, T. Iitaka, X. Zhao, T. Sugano and Y. Aoyagi
Mater.Sci. Eng. B
51, 146-149
1998



254 Environmental coupling and phase breaking in open quantum dots
J. P. Bird, A. P. Micolich, H. Linke, D. K. Ferry, R. Akis, Y. Ochiai, Y. Aoyagi and T. Sugano
J. Phys. Condens. Matt.
10, L55-L61
1998



255 Surface structure control of GaAs(111) A vicinal substrates by metal-organic vapor-phase epitaxy
J. S. Lee, H. Isshiki, Y. Sugano and Y. Aoyagi
J. Cryst. Growth
183, 43-48
1998



256 Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells
P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, Q. Wang, K. Ishibashi and Y. Aoyagi
J. Appl. Phys.
84, 2112-2122
1998



257 InGaAs/GaAs quantum nanostructure fabrication on GaAs(111) A vicinal substrates by atomic layer epitaxy
J. S. Lee, H. Isshiki, T. Sugano and Y. Aoyagi
J. Appl. Phys.
83, 5525-5528
1998



258 Ballistic weak localization and wave function scarring in quantum wires
Y. Ochiai, L. Lin, K. Yamamoto, J. P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano, R. Akis and D. K. Ferry
Jpn. J. Appl. Phys.
37, 1657-1659
1998



259 Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation
X. Zhao, S. Komuro, H. Isshiki, Y. Aoyagi and T. Sugano
Appl. Phys. Lett.
74, 120-122
1998



260 In situ observation and correction of resist patterns in atomic force microscopic lithography
T. Shiokawa, Y. Aoyagi, M. Shigeno and S. Namba
Appl. Phys. Lett.
72, 2481-2483
1998



261 Calculating the linear response functions of noninteracting electrons with a time-dependent Schrodinger equation
T. Iitaka, S. Nomura, H. Hirayama, X. Zhao, Y. Aoyagi and T. Sugano
Phys. Rev. E
56, 1222-1229
1997



262 Plasma interaction processes during the pulsed laser deposition of superconducting thin films
P. O'Keeffe, O. O'Morain, S. Komuro, S. Den, T. Morikawa and Y. Aoyagi
Appl. Surf. Sci.
113・114, 202-205
1997



263 Reversible transition between InGaAs dot structure and InGaAsP flat surface
K. Ozasa, Y. Aoyagi, J.P. Young and L. Samuelson
Appl. Phys. Lett.
71, 797-799
1997



264 Stimulated emission from optically pumped GaN quantum dots
S. Tanaka, H. Hirayama, Y. Aoyagi, Y. Narukawa, Y. Kawakami and S. Fujita
Appl. Phys. Lett.
71, 1299-1301
1997



265 Phase breaking of trapped electrons in a gated quantum dot
N. Sasaki, Y. Okubo, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, and D. K. Ferry
Superlatt. Microstr.
22, 69-74
1997



266 Aharonov-Bohm oscillations in quantum dots: precise departures from h/e periodicity
J. P. Bird, M. Stopa, R. P. Taylor, R. Newbury, Y. Aoyagi, T. Sugano
Superlatt. Microstr.
22, 57-63
1997



267 Phase breaking as a probe of the intrinsic level spectrum of open quantum dots
J. P. Bird, H. Linke, J. Cooper, A. P. Micolich, D. K. Ferry, R. Akis, Y. Ochiai, R. P. Taylor, R. Newbury, P. Omling, Y. Aoyagi and T. Sugano
Phys. Stat. Sol. B
204, 314-317
1997



268 Giant back-scattering resonances in edge-state transport through quantum dots
J. P. Bird, M. Stopa, K. Connolly, D. P. Pivin Jr., D. K. Ferry, Y. Aoyagi and T. Sugano
Phys. Rev. B
56, 7477-7484
1997



269 Linear scaling calculation for optical-absorption spectra of large hydrogenerated silicon nanocrystallites
S. Nomura, T. Iitaka, X. Zhao, T. Sugano and Y. Aoyagi
Phys. Rev. B
56, R4348-4350
1997



270 Magnetically induced suppression of phase breaking in ballistic mesoscopic billiards
Y. Okubo, J.P. Bird, Y. Ochiai, D.K. Ferry, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. Rev. B
55, 1368-1371
1997



271 Stability of regular orbits in ballistic quantum dot
Y. Okubo, Y. Ochiai, D. Vasileska, R. Akis, D.K. Ferry, J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. Lett. A
236, 120-124
1997



272 Novel spontaneous emission control in 3-dimensional photonic bandgap crystal cavity
H. Hirayama, T. Hamano and Y. Aoyagi
Mater. Sci. Eng. B
51, 99-102
1997



273 Periodic conductance fluctuations and lead-induced scarring in open quantum dots
J.P. Bird, R. Akis, D.K. Ferry, Y. Aoyagi and T. Sugano
J. Phys. Condens. Mat.
9, 5935-5950
1997



274 Atomic layer epitaxy of AIP and its application to X-ray multilayer mirror
M. Ishii, S. Iwai, H. Kawata, T. Ueki and Y. Aoyagi
J. Cryst. Growth
180, 15-21
1997



275 Multiatomic step formation with excellent uniformity on vicinal (111)A GaAs surfaces by metalorganic vapor-phase epitaxy
J.S. Lee, H. Isshiki, T. Sugano and Y. Aoyagi
J. Cryst. Growth
173, 27-32
1997



276 Phase breaking of coherent electron waves in dot array systems
Y. Ochiai, A.W. Widjaja, N. Sasaki, K. Yamamoto, J.P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano and D.K. Ferry
Jpn. J. Appl. Phys.
36, 3971-3973
1997



277 The role of electron phase coherence in quantum transport through open ballistic cavities
J.P. Bird, A.P. Micolich, R. Akis, D.K. Ferry, R. Newbury, R.P. Tayler, D.M. Olatona, R. Wirtz, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
36, 3968-3970
1997



278 Quantum transport in single and multiple quantum dots
D. K. Ferry, J. P. Bird, R. Akis, D.P. Pivin Jr., K. M. Connolly, K. Ishibashi, Y. Aoyagi, T. Sugano and Y. Ochiai
Jpn. J. Appl. Phys.
36, 3944-3950
1997



279 Carrier transport in nanodevices
D. K. Ferry, R. Akis, S. Udipi, D. Vasileska, D.P. Pivin Jr., K.M. Connolly, J. P. Bird, K. Ishibashi, Y. Aoyagi, T. Sugano and Y. Ochiai
Jpn. J. Appl. Phys.
36, 1841-1845
1997



280 Trajectory transition due to gate depletion in corrugation gated quantum wires
Y. Ochiai, A.W. Widjaja, N. Sasaki, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D. K. Ferry
Jpn. J. Appl. Phys.
36, 1746-1748
1997



281 New technique for fabrication of two-dimensional photonic bandgap crystals by selective epitaxy
T. Hamano, H. Hirayama and Y. Aoyagi
Jpn. J. Appl. Phys.
36, L286-L288
1997



282 Phase breaking in a quantum billiard
T. Iitaka, J. P. Bird, M. Stopa, K. Ishibashi, Y. Aoyagi and Y. Sugano
Int. J. Bifurcat. Chaos
7, 937-943
1997



283 Quantum transport in open mesoscopic cavities
J. P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Chaos, Solitons & Fractals
8, 1299-1324
1997



284 Oxygen-induced defect luminescence in porous silicon
P. O'Keeffe, S. Komuro, T. Morikawa and Y. Aoyagi
Appl. Surf. Sci.
113・114, 135-139
1997



285 Photoluminescence and probe effect of Er-doped nanometer-sized Si materials
X. Zhao, S. Komuro, H. Isshiki, S. Maruyama, Y Aoyagi and T. Sugano
Appl. Surf. Sci.
113・114, 121-125
1997



286 Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy
J. S. Lee, H. Isshiki, T. Sugano and Y. Aoyagi
Appl. Surf. Sci.
112, 132-137
1997



287 Effects of active hydrogen on atomic layer epitaxy of GaAs
T. Meguro, H. Isshiki, J. S. Lee, S. Iwai and Y. Aoyagi
Appl. Surf. Sci.
112, 118-121
1997



288 Digital etching of GaAs
T. Meguro and Y Aoyagi
Appl. Surf. Sci.
112, 55-62
1997



289 Landau level formation in semiconductor quantum dots in a high magnetic field
S. Nomura, L. Samuelson, M.E. Pistol, K. Uchida, N. Miura, T. Sugano and Y. Aoyagi
Appl. Phys. Lett.
71, 2316-2318
1997



290 Observation and control of surface morphology of AIP grown by atomic layer epitaxy
M. Ishii, S. Iwai, T. Ueki and Y. Aoyagi
Appl. Phys. Lett.
71, 1044-1046
1997



291 Reflection wavelength control method for layer-by layer controlled X-ray multilayer mirrors
M. Ishii, S. Iwai, T. Ueki and Y. Aoyagi
Appl. Opt.
36, 2152-2156
1997



292 Observation of amplified spontaneous emission in the soft X-ray region from a recombining lithiumlike aluminum plasma pumped by multipulse irradiation
T. Kawachi, K. Ando, Y Aoyagi, M. Aoyama, T. Hara and A. Sasaki
J. Opt. Soc. Am. B
14, 1863-1869
1997



293 Enhancement of the 15.4 nm line of the lithium like aluminum recombining plasma laser using a half cavity
T. Kawachi, K. Ando, H. Oyama, T. Hara and Y. Aoyagi
Jpn. J. Appl. Phys.
36, 7048-7049
1997



294 Transient characteristics of nitrogen gas-pulsed electron cyclotron resonance plasma
Y.J. Park, K. Ozasa, P. O'Keeffe, Y. Aoyagi and S.K. Min
J. Vac. Sci. Tech. A
14, 2814-2819
1996



295 Oxygen atomic flux O enhancement by gas-pulsed electron cyclotron resonance plasma
Y.J. Park, P. O'Keeffe, K. Ozasa, H. Mutoh, Y. Aoyagi and J.K. Min
J. Appl. Phys.
81, 2114-2118
1996



296 Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy
J.S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
Appl. Surf. Sci.
103, 275-278
1996



297 Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant
S. Tanaka, S. Iwai and Y. Aoyagi
Appl. Phys. Lett.
69, 4096-4098
1996



298 The role of lead openings in regular mesoscopic billiards
J. P. Bird, D.K. Ferry, R. Akis, R. Newbury, R.P. Taylor, D.M. Olatona, Y. Ochiai, K. Ishibashi, Y. Aoyagi and T. Sugano
Supertlatt. Microstr.
20, 287-295
1996



299 Phase breaking in ballistic quantum dots: a correlation field analysis
J. P. Bird, K. Ishibashi, D.K. Ferry, R. Newbury, D.M. Olatana, Y. Ochiai, Y. Aoyagi and T. Sugano
Surf. Sci.
361・362, 730-734
1996



300 Illumination-induced inhomogeneity in the carrier density profile of split gate devices
H. F. Hoffman, K. Ishibashi, J.P. Bird, Y. Aoyagi and T. Sugano
Semicond. Sci. Tech.
11, 1085-1089
1996



301 Electronic structure of a model nanocrystalline/amorphous mixed-phase silicon
S. Nomura, X. Zhao, Y. Aoyagi and T. Sugano
Phys. Rev. B
54, 13974-13979
1996



302 Transport properties of superconducting SET transistor with a loop
A. Kanda, K. Ishibashi, Y. Aoyagi and T. Sugano
Physica B
227, 235-237
1996



303 Transition from chaotic to regular quantum scattering in mesoscopic billiards with nominally regular geometry
J.P. Bird, D.K. Ferry, G. Edwards, D.M. Olatona, R. Newbury, R.P. Taylor, K. Ishibashi, Y. Aoyagi, T. Sugano and Y. Ochiai
Physica B
227, 148-151
1996



304 Magnetic field effects in p-type modulation-doped GaAs quantum wires
S. Nomura, H. Isshiki, Y. Aoyagi and T. Sugano
Physica B
227, 38-41
1996



305 Positron/positronium annihilation in nanocrystalline silicon thin films
X. Zhao, Y. Itoh, Y. Aoyagi, T. Sugano, K. Hirata, Y. Kobayashi, T. Ohdaira, R. Suzuki and T. Mikado
J. Radioanal. Nuc. Chem.
211, 31-38
1996



306 Low temperature magnetoresistance in corrugation gated wires
Y. Ochiai, A. Wahju, A. Widjaja, N. Sasaki, K. Yamamoto, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D.K. Ferry
Czech. J. Phys.
46, 2347-2348
1996



307 Oxygen plasma induced enhancement and fatigue-suppression of the photoluminescence from porous Si
P. O'Keeffe, S. Komuro, T. Morikawa and Y. Aoyagi
J. Non-Crys. Solids
198・200, 969-972
1996



308 Time-resolved photoluminescence of porous silicon under double-pulse excitation
S. Komuro, T. Morikawa, P. O'Keeffe and Y. Aoyagi
J. Non-Crys. Solids
198・200, 965-968
1996



309 Formation and electronic states of Si nanocrystallites in amorphous Si
X. Zhao, S. Nomura, Y. Aoyagi and T. Sugano
J. Non-Crys. Solids
198・200, 847-852
1996



310 Optical properties of semiconductor quantum dots in magnetic fields
S. Nomura, Y. Segawa, K. Misawa, T. Kobayashi, X. Zhao, Y. Aoyagi and T. Sugano
J. Luminescence
70, 144-157
1996



311 Atomic layer epitaxy of GaAs and GaAsxP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces
J. S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano Y. Aoyagi
J. Crystal Growth
160, 21-26
1996



312 Carrier dynamics in oxidized porous silicon
S. Komuro, T. Kato, T. Morikawa, P. O'Keeffe and Y. Aoyagi
J. Appl. Phys.
80, 1749-1756
1996



313 Periodic conductance fluctuations and stable orbits in mesoscopic semiconductor billiards
J. P. Bird, D.K. Ferry, R. Akis, Y. Ochiai, K. Ishibashi and Y. Aoyagi
Europhysics Lett.
35, 529-534
1996



314 Magnetoresistance of single-electron transistor with a superconducting loop
A. Kanda, K. Ishibashi, Y. Aoyagi and T. Sugano
Czech. J. Phys.
46, 2297-2298
1996



315 Device noise as a probe of electron motion in quantum dots at high magnetic fields
J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Brazilian J. Physics
26, 341-344
1996



316 Investigations of electron wave interference and quantum chaos in ballistic quantum dots with square geometry
J. P. Bird, K. Ishibashi, R. Newbury, D.M. Olatana, R.P. Taylor, Y. Ochiai, Y. Aoyagi and T. Sugano
Brazilian J. Physics
26, 285-288
1996



317 Tunable UV laser induced digital etching of GaAs: wavelength dependence of etch rate and surface processes
T. Meguro, K. Sakai, Y. Yamamoto, T. Sugano and Y. Aoyagi
Appl. Surf. Sci.
106, 365-368
1996



318 Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation
S. Komuro, S. Maruyama, T. Morikawa, X. Zhao, H. Isshiki and Y. Aoyagi
Appl. Phys. Lett.
69, 3896-3898
1996



319 Novel surface emitting laser diode using photonic band-gap crystal cavity
H. Hirayama, T. Hamano and Y. Aoyagi
Appl. Phys. Lett.
69, 791-793
1996



320 Carrier scattering processes in quantum wires at high magnetic fields by correlation field analysis
Y. Ochiai, K. Yamamoto, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D.K. Ferry
Physica B
216, 376-379
1996



321 Direct observation of oxygen-induced luminescent states in porous silicon by tunable excitation time-resolved spectroscopy
S. Komuro, T. Kato, T. K. Morikawa, P. O'Keeffe and Y. Aoyagi
Appl. Phys. Lett.
68, 949-951
1996



322 Temporal evolution of hydrogen plasma produced with gas pulse injection scheme
K. Ozasa and Y. Aoyagi
Surf. Coat. Tech.
74-75, 345-350
1995



323 In situ pattern etching of GaAs by trimethylindium and H2O2 gases with electron-beam-induced resist
E.K. Kim, S.K. Min, K. Ozasa and Y. Aoyagi
Semicond. Sci. Technol.
10, 91-94
1995



324 Fast reconstruction transitions and fast surface reactions in short-pulse supersonic nozzle beam epitaxy
S. Zhang, J. Cui, A. Tanaka and Y. Aoyagi
J. Crys. Growth
150, 622-626
1995



325 Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 x 4)γ initial surface by millisecond time-resolved reflectance difference
J. Cui, S. Zhang, A. Tanaka and Y. Aoyagi
J. Crys. Growth
150, 616-621
1995



326 Crystallization of amorphous silicon by NiSi2 precipitates
O. Schoenfeld, T. Hempel, X. Zhao and Y. Aoyagi
Thin Solid Films
261, 236-240
1995



327 Lead-induced transition to chaos in ballistic mesoscopic billiards
J.P. Bird, D.M. Olatona, R. Newbury, R.P. Taylor, K. Ishibashi, M. Stopa, Y. Aoyagi, T. Sugano, Y. Ochiai
Phys. Rev. B
52, RC R14336-R14339
1995



328 Temporal dynamics of a magnetoexciton in a quantum well
I. Aksenov, Y. Aoyagi, J. Kusano, T. Sugano, T. Yasuda and Y. Segawa
Phys. Rev. B
52, 17430-17434
1995



329 Spectral characteristics of conductance fluctuations in ballistic quantum dots: The influence of finite magnetic field and temperature
J.P. Bird, K. Ishibashi, D.K. Ferry, Y. Ochiai, Y. Aoyagi and T. Sugano
Phys. Rev. B
52, 8295-8304
1995



330 Phase breaking in ballistic quantum dots: Transition from two- to zero-dimensional behavior
J.P. Bird, K. Ishibashi, D.K. Ferry, Y. Ochiai, Y. Aoyagi and Y. Sugano
Phys. Rev. B
51, 18037-18040
1995



331 Exciton states in two-dimensional systems of GaAs/AlAs multi-quantum-well structures under high magnetic fields
Y. Yasui, Y. Segawa, Y. Aoyagi, Y. Iimura, G.E.W. Bauer, I. Mogi and G. Kido
Phys. Rev. B
51, 9813-9819
1995



332 Effect of a magnetic field on the excitonic luminescence line shape in a quantum well
I. Aksenov, J. Kusano, Y. Aoyagi, T. Sugano, T. Yasuda and Y. Segawa
Phys. Rev. B
51, 4278-4284
1995



333 Breakdown of correlated diffusion in quasiballistic quantum wires at high magnetic fields
J. P. Bird, K. Ishibashi, Y. Ochiai, M. Lakrimi, A.D.C. Grassie, K.M. Hutchings, Y. Aoyagi and T. Sugano
Phys. Rev. B
52, 1793-1799
1995



334 Nanocrystalline Si: a material constructed by Si quantum dots
X. Zhao, O. Schoenfeld, S. Nomura, S. Komuro, Y. Aoyagi and T. Sugano
Mater. Sci. Eng B
35, 467-471
1995



335 Low dimensional transport in GaAs/AlGaAs quasi-one-dimensional wires by a correlation field analysis of phase coherent interference
Y. Ochiai, K. Yamamoto, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D.K. Ferry
Mater. Sci. Eng. B
35, 364-366
1995



336 Effect of a magnetic field on the excitonic luminescence decay time in a GaAs-AlxGa1-xAs quantum well
I. Aksenov, Y. Aoyagi, J. Kusano, T. Sugano, T. Yasuda and Y. Segawa
Jpn. J. Appl. Phys.
34, L547-L550
1995



337 Electron wave interference in ballistic and quasi-ballistic nanostructures
K. Ishibashi, J.P. Bird, D.K. Ferry, M. Lakrimi, A.D.C. Grassie, K.M. Hutchings, Y. Ochiai, T. Sugano and Y. Aoyagi
Jpn. J. Appl. Phys.
34, 6966-6970
1995



338 Study of scattering processes in quantum wires by a correlation field analysis of the phase coherent interferences
Y. Ochiai, K. Yamamoto, K. Ishibashi, J.P. Bird, Y. Aoyagi, Y. Sugano and D.K. Ferry
Jpn. J. Appl. Phys.
34, 4345-4347
1995



339 The magnetic field dependent characteristics of conductance fluctuations in ballistic quantum dots
J.P. Bird, K. Ishibashi, Y. Ochiai, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
34, 4342-4344
1995



340 Is there a magnetic-field-induced breakdown in the universality of conductance fluctuations?
D.K. Ferry, G. Edwards, K. Yamamoto, Y. Ochiai, J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
34, 4338-4341
1995



341 Correlation field analysis of the influence of device geometry and bulk disorder on electron
Y. Ochiai, K. Yamamoto, Y. Onishi, M. Kawabe, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D.K. Ferry
Jpn. J. Appl. Phys.
34, 1339-1341
1995



342 Zero-current voltage fluctuations in quantum dots at high magnetic fields
J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
J. Phys. Soc. Jpn.
64, 3618-3621
1995



343 Structure and electrical transport in microcrystalline composite Si-NiSi2 thin films
O. Schoenfeld, X. Zhao, T. Hempel, Y. Aoyagi and T. Sugano
J. Phys. Chem. Solids
56, 123-128
1995



344 In situ observation of undevelopment patterns in atomic force microscope lithography
T. Shiokawa, T. Hanada, M. Shigeno, T. Sugano and Y. Aoyagi
J. Photopolym. Sci. Technol.
8, 677-678
1995



345 Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
J. Appl. Phys.
78, 7277-7281
1995



346 Optical absorption of microcrystalline Si-Ni thin films
O. Schoenfeld, X. Zhao, T. Hempel and Y. Aoyagi
J. Appl. Phys.
78, 1987-1991
1995



347 Surface reaction control in digital etching of GaAs by using a tunable UV laser system: reaction control mechanism in layer-by-layer etching
M. Ishii, T. Meguro, T. Sugano, K. Gamo and Y. Aoyagi
Appl. Surf. Sci.
86, 554-558
1995



348 Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001) vicinal substrates
J.S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi
Appl. Phys. Lett.
67, 1283-1285
1995



349 Room-temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation
P. O'Keeffe, Y. Aoyagi, S. Komuro, T. Kato and T. Morikawa
Appl. Phys. Lett.
66, 836-838
1995



350 Magnetic field effects in direct- and indirect-gap semiconductor quantum dots
S. Nomura, W. Zhao, O. Schoenfeld, K. Misawa, T. Kobayashi, Y. Segawa, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys. Suppl.
34, 125-127
1995



351 Deposition of thin indium oxide film and its application to selective epitaxy for in situ processing
K. Ozasa, T. Ye and Y. Aoyagi
Thin Solid Films
246, 58-64
1994



352 Growth of ultrathin silver films by excimer-laser-induced decomposition of silver acetate in air
Y.F. Lu, M. Takai, T. Shiokawa and Y. Aoyagi
Jpn. J. Appl. Phys.
33, L1313-L1315
1994



353 In situ pattern deposition of In2O3 and in situ pattern etching of GaAs
K. Ozasa, E.K. Kim and Y. Aoyagi
Appl. Phys. Lett.
65, 1635-1637
1994



354 Generation of high-peak pulse beam of hydrogen plasma or use in short-pulsed chemical beam epitaxy
K. Ozasa and Y. Aoyagi
Appl. Phys. Lett.
64, 2220-2222
1994



355 Surface cleaning of metals by pulsed-laser irradiation in air
Y.F. Lu, M. Takai, S. Komuro, T. Shiokawa, Y. Aoyagi
Appl. Phys. A
59, 281-288
1994



356 Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses
K. Ozasa, T. Ye and Y. Aoyagi
J. Vac. Sci. Technol. A
12, 120-124
1994



357 Millisecond time-resolved reflectance difference measurements of GaAs grown by short-pulse supersonic nozzle beam epitaxy
J. Cui, S. Zhang, A. Tanaka and Y. Aoyagi
Appl. Phys. Lett.
64, 3285-3267
1994



358 Short-pulse chemical beam epitaxy
S. Zhang, J, Cui, A. Tanaka and Y. Aoyagi
J. Cryst. Growth
136, 200-203
1994



359 Short-pulse supersonic nozzle beam epitaxy: A new approach for submonolayer controlled growth
S. Zhang, J. Cui, A. Tanaka and Y. Aoyagi
Appl. Phys. Lett.
64, 1105-1107
1994



360 Scaling properties of universal conductance fluctuations in quasi ballistic narrow wires
Y Ochiai, K. Yamamoto, T. Onishi, K. Ishibashi, J.P. Bird, Y. Aoyagi and T. Sugano
Superlatt. and Microstr.
16, 179-181
1994



361 Giant backscattering resonances in the magneto-resistance of GaAs/AlGaAs quantum dots
J.P.Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Superlatt. and Microstr.
16, 161-164
1994



362 Magneto-Coulomb oscillations in GaAs - AlGaAs quantum dot structures
M. Stopa, J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Superlatt. and Microstr.
15, 99-103
1994



363 Magnetic field dependence of optical absorption in Si nanocrystallites: A quantum size effect
S. Nomura, X. Zhao, O. Schoenfeld, K. Misawa, K. Kobayashi and Y Aoyagi
Solid State Comm.
92, 665-668
1994



364 Experimental studies of electronic transport in semiconductor quantum dot structures
J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Solid-State Elec.
37, 709-712
1994



365 Spectral characteristics of conductance fluctuations in ballistic quantum dots
J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Phys. Rev. B
50, 18678-18681
1994



366 Quantum confinement in nanometer-sized silicon crystallites
X. Zhao, O. Schoenfeld, S. Komuro, Y. Aoyagi and T. Sugano
Phys. Rev. B
50, 18654-18657
1994



367 Coulomb blockade of the Aharonov-Bohm effect in GaAs/AlxGa1-xAs quantum dots
J.P.Bird, K. Ishibashi, M. Stopa, Y. Aoyagi and T. Sugano
Phys. Rev. B
50, 14983-14990
1994



368 Magneto-Coulomb oscillations
J.P. Bird, K. Ishibashi, M. Stopa, R.P. Taylor, Y. Aoyagi and T. Sugano
Phys. Rev. B
49, 11488-11491
1994



369 Magnetotransport in quasi-ballistic narrow wires
Y. Ochiai, K. Yamamoto, T. Onishi, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and D.K. Ferry
Physica B
201, 357-360
1994



370 Correlation field in quasi-ballistic narrow wires
Y. Ochiai, K. Yamamoto, T. Onishi, M. Kawabe, K. Ishibashi, J.P. Bird, Y. Aoyagi and T. Sugano
Physica B
194・196, 1139-1140
1994



371 Microstructure and photoluminescence of nanocrystalline silicon thin films
X. Zhao, O. Schoenfeld, Y. Aoyagi and Y. Sugano
J. Phys. D: Appl. Phys.
27, 1575-1578
1994



372 Fast evolution of surface dynamics during epitaxy of GaAs on c(4 x 4) reconstructed surface
S. Zhang, J. Cui, A. Tanaka and Y. Aoyagi
J. Crys. Growth
145, 974-975
1994



373 Formation of nanocrystallites in amorphous silicon thin films
O. Schoenfeld, X. Zhao, T. Hempel, J. Alaesing, Y. Aoyagi and T. Sugano
J. Crys. Growth
142, 268-270
1994



374 Atomic layer epitaxy of AlAs using dimethylethylamine alane
M. Nagano, S. Iwai, K. Nemoto and Y. Aoyagi
Jpn. J. Appl. Phys.
33, L1289-L1291
1994



375 Observation of direct transitions in silicon nanocrystallites
X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
33, L899-L901
1994



376 Violet and blue light emissions from nanocrystalline silicon thin films
X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
33, L649-L651
1994



377 Radical-beam-induced surface reaction processes of porous Si
P. O'Keeffe, S. Komuro, T. Kato, T. Morikawa and Y. Aoyagi
Jpn. J. Appl. Phys.
33, 7117-7122
1994



378 Optical, electrical and structural investigations of the transition from amorphous to microcrystalline silicon
O. Schoenfeld, T. Hempel, X. Zhao, T. Sugano and Y. Aoyagi
Jpn. J. Appl. Phys.
33, 6082-6085
1994



379 Observation of Aharonov-Bohm oscillations in the magnetoresistance of GaAs/AlGaAs quantum dot
J.P. Bird, K. Ishibashi, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
33, 2509-2510
1994



380 Control of the etching reaction of digital etching using tunable UV laser irradiation
T. Meguro, M. Ishii, T. Sugano, K. Gamo and Y. Aoyagi
Appl. Surf. Sci.
82・83, 193-199
1994



381 Surface processes of selective growth by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Appl. Surf. Sci.
82・83, 57-63
1994



382 Digital etching by using a laser beam
M. Ishii, T. Meguro, T. Sugano, K. Gamo and Y. Aoyagi
Appl. Surf. Sci.
79・80, 104-109
1994



383 Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy
S. Iwai, T. Meguro, H. Isshiki, T. Sugano and Y. Aoyagi
Appl. Surf. Sci.
79・80, 232-236
1994



384 Violet luminescence from anodized microcrystalline silicon
X. Zhao, O. Schoenfeld, Y. Aoyagi and T. Sugano
Appl. Phys. Lett.
65, 1290-1292
1994



385 Additional dimer-row structure of 3C-SiC(001) surfaces observed by scanning tunneling microscopy
S. Hara, S. Misawa, S. Yoshida and Y. Aoyagi
Phys. Rev. B
50, 4548-4553
1994



386 Solid-state tunable deep-ultraviolet laser system from 198 to 300 nm
T. Meguro, T. Caughey, L. Wolf and Y. Aoyagi
Opt. Lett.
19, 102-104
1994



387 Composition change of indium oxide film by triethylgallium irradiation prepared for in situ selective epitaxy use
K. Ozasa, T. Ye and Y. Aoyagi
Jpn. J. Appl. Phys.
32, 4732-4736
1993



388 Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the mask
K. Ozasa, T. Ye and Y. Aoyagi
Appl. Phys. Lett.
63, 1634-1636
1993



389 Thin gallium oxide film deposited in vacuum for in situ process use
K. Ozasa, T. Ye, and Y. Aoyagi
Jpn. J. Appl. Phy.
32, L329-L331
1993



390 Surface processes in digital etching of GaAs
T. Meguro, M. Ishii, K. Kodama, Y. Yamamoto, K. Gamo and Y. Aoyagi
Thin Solid Films
225, 136-139
1993



391 Atomic layer manipulation of III-V compounds
Y. Aoyagi, K. Shinmura, K. Kawasaki, I. Nakamoto, K. Gamo and S. Namba
Thin Solid Films
225, 120-123
1993



392 Surface photo-absorption study of the laser assisted atomic layer epitaxial growth process of GaAs
J .P. Simko, T. Meguro, S. Iwai, K. Ozawa, Y. Aoyagi and T. Sugano
Thin Solid Films
225, 40-46
1993



393 Scaling properties of universal conductance fluctuations in quasi-ballistic split-gate wires: Probing geometrical effects
T. Onishi, M. Kawabe, K. Ishibashi, J.P. Bird, Y. Aoyagi, T. Sugano and Y. Ochiai
Phys. Rev. B
48, 12353-12356
1993



394 Conductance fluctuations in a quasi-ballistic narrow wire confined by split metal gates
T. Onishi, Y. Ochiai, M. Kawabe, K. Ishibashi, J.P. Bird, Y. Aoyagi and T. Sugano
Physica B
184, 351-354
1993



395 Formation of low-dimensional structures by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Optoelectronics - Devices and Tech.
8, 509-522
1993



396 The transmission properties of quantum dots at high magnetic fields
K. Ishibashi, J.P. Bird, M. Stopa, T. Sugano and Y. Aoyagi
Jpn. J. Appl. Phys.
32, 6246-6250
1993



397 Digital etching using KrF excimer laser: Approach to atomic-order-controlled etching by photo induced reaction
M. Ishii, T. Meguro, K. Gamo, T. Sugano and Y. Aoyagi
Jpn. J. Appl. Phys.
32, 6178-6181
1993



398 Interference area of universal conductance fluctuations in narrow GaAs/AlGaAs wires
U. Ochiai, T. Onishi, M. Kawabe, K. Ishibashi, J.P. Bird, Y. Aoyagi and T. Sugano. Meguro
Jpn. J. Appl. Phys.
32, 528-531
1993



399 Crystallographic selective growth of GaAs by atomic layer epitaxy
H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro
Appl. Phys. Lett.
63, 1528-1530
1993



400 Numerical study of the interference effects of electron waves scattered by impurities or slits in a quasi-one-dimensional system
S. Nonoyama, A. Nakamura, Y. Aoyagi, T. Sugano and A. Okiji
Phys. Rev. B
47, 2423-2426
1993



401 Enhancement of soft X-ray emission from Al Plasma by pulse train laser irradiation
H. Hirose, T. Hara, K. Ando, F. Negishi and Y. Aoyagi
Jpn. J. Appl. Phys.
32, L1538-L1541
1993



402 Alignment control of a liquid crystal on a photosensitive polyvinylalcohol film
Y. Iimura, J. Kusano, S. Kobayashi, Y. Aoyagi and T. Sugano
Jpn. J. Appl. Phys.
32, L93-L96
1993



403 Si desorption from a β-SiC(001) surface by an oxygen flux
S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, and S. Yoshida
Surf. Sci. Lett.
278, L141-L146
1992



404 Effect of side wall scattering on the relaxation time in a narrow GaAs/AlGaAs wire in magnetic field
K. Ishibashi, Y Aoyagi, S. Namba, Y. Ochiai, M. Kawabe and K. Gamo
Superlatt. and Microstr.
11, 195-197
1992



405 Large radium new etching system using electron beam excited plasma
Y. Aoyagi, T. Hara, M. Hamagaki, M. Ryoji and K. Ohnishi
J. Vac. Sci. Technol. B
10/ 6, 2699-2702
1992



406 Numerical study of the charge distribution in a quantum wire consisting a junction of wide-narrow geometry
S. Nonoyama, K. Ishibashi, Y. Aoyagi and S. Namba
J. Phys. Soc. Jpn
61, 3829-3830
1992



407 Modified perturbational method for the magnetoexciton ground state in quantum wells
K.S. Lee, Y. Aoyagi and T. Sugano
Phys. Rev. B
46, 10269-10276
1992



408 Size effect in the low temperature magnetoresistance of narrow GaAs/AlGaAs wires
Y. Ochiai, T. Ohnishi, J.P. Bird, M. Kawabe, K. Ishibashi, Y. Aoyagi and S. Namba
Surf. Sci.
263, 388-391
1992



409 Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire
K. Ishibashi, Y Aoyagi, S. Namba. Y. Ochiai, J.P. Bird and M. Kawabe
Surf. Sci.
263, 378-381
1992



410 Conductance fluctuations in GaAs/AlGaAs narrow wires in quasi-ballistic regime
K. Ishibashi, J.P. Bird, T. Sugano, Y. Aoyagi, Y. Ochiai, T. Ohnishi and M. Kawabe
Jpn. J. Appl. Phy.
31, 4504-4507
1992



411 New etching system with a large diameter using electron beam excited plasma
M. Ryoji, T. Hara, K. Ohnishi, M. Hamagaki, Y. Dake, M. Tohkai and Y. Aoyagi
Jpn. J. Appl. Phy.
31, 4357-4362
1992



412 Time-resolved luminescence spectra of porous Si
T. Miyoshi, K.S. Lee and Y. Aoyagi
Jpn. J. Appl. Phy.
31, 2470-2471
1992



413 Study of surface processes in the digital etching of GaAs
M. Ishii, T. Meguro, H. Kodama, Y. Yamamoto and Y. Aoyagi
Jpn. J. Appl. Phys.
31, 2212-2215
1992



414 Ab initio cluster study of the interaction of hydrogen with the GaAs (100) surface
S. Nonoyama, Y. Aoyagi, and S. Namba
Jpn. J. Appl. Phys.
31, 1298-1302
1992



415 Self-limiting growth on β-SiC(001) surface
S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma and S. Yoshida
Surface Science
273, 437-441
1992



416 Numerical studies of quantum conduction through a junction of wide-narrow geometry
S. Nonoyama, K. Ishibashi, Y. Aoyagi and S. Namba
Appl. Phys. Lett.
60, 234-236
1992



417 Molecular layer etching of GaAs
Y. Aoyagi, K. Shinmura, K. Kawasaki, T. Tanaka, K. Gamo, S. Namba, and I. Nakamoto
Appl. Phys. Lett.
60, 968-970
1992



418 Observation of soft X-ray amplified spontaneous emission in a recombining Si plasma pumped by a low-power laser
H. Yashiro, T. Hara, K. Ando, F. Negishi, S. Ido, Y. Aoyagi
Jpn. J. Appl. Phys.
31, L92-L94
1992



419 The irradiation effects of an oxygen radical beam on the preparation of superconducting thin films
P. O'Keeffe, S. Komuro, S. Den, T. Morikawa and Y. Aoyagi
Jpn. J. Appl. Phys.
30, L834-L837
1991



420 Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy
S. Iwai, T. Meguro, Y. Aoyagi and T. Miyoshi
J. Cryst. Growth
107, 136-140
1991



421 Microfabricated submicron Al-filament biprism as applied to electron holography
K. Ogai, Y. Kimura, R. Shimizu, K. Ishibashi, Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
30, 3272-3276
1991



422 Low temperature magnetoresistance of a quasi-ballistic narrow wire confined by split metal gates
Y. Ochiai, T. Onishi, J.P. Bird, M. Kawabe, K. Ishibashi, Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
30, 3859-3861
1991



423 Ballistic electron transport on periodic and quasi-periodic triangular lattices of scatterers
J. Takahara, T. Kakuta, T. Yamashita, Y. Takagaki, T. Shiokawa, K. Gamo, S. Takaoka and K. Murase
Jpn.J.Appl.Phys.
30, 3250-3255
1991



424 Surface kinetics of laser atomic layer epitaxy (Laser-ALE) of GaAs, AlAs and AlGaAs
Y. Aoyagi, S. Iwai and T. Meguro
Denki Kagaku
59, 1037-1042
1991



425 Laser assisted atomic layer epitaxy
Y. Aoyagi, T. Meguro, S. Iwai, and A. Doi
Materials Sci. and Eng. B
10, 121-132
1991



426 Reduction of textural drift in a laser recrystallized silicon-on-insulator structure employing liquid encapsulation
A. Doi, T. Meguro and Y. Aoyagi
Jpn. J. Appl. Phys.
29, L847-L849
1990



427 Surface segregation of indium during growth of InGaAs in chemical beam epitaxy
Y. Iimura, K. Nagata, Y. Aoyagi and S. Namba
J. Crys. Growth
105, 230-233
1990



428 Laser assisted chemical beam epitaxy
K. Nagata, Y. Iimura, Y. Aoyagi and S. Namba
J. Crys. Growth
105, 52-56
1990



429 Beam assisted layer-by-layer processes and the mechanism in III-V compounds
Y. Aoyagi, T. Meguro and S. Iwai
Acta Polytechnica Scandinavica
195, 55-65
1990



430 Layer-by-layer controlled digital etching by means of an electron-beam-excited plasma system
T. Meguro, M .Ishii, H. Kodama, N. Hamagaki, T. Hara, Y. Yamamoto and Y. Aoyagi
Jpn. J. Appl. Phys.
29, 2216-2219
1990



431 Laser crystal growth of semiconductors
A. Doi and Y. Aoyagi
J. of Physics
14, 79-97
1990



432 Digital etching of GaAs: New approach of dry etching to atomic ordered processing
T. Meguro, M. Hamagaki, S. Modaressi, T. Hara, Y. Aoyagi, M. Ishii and Y. Yamamoto
Appl. Phys. Lett.
56, 1552-1554
1990



433 Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
T. Miyoshi, S. Iwai, Y. Iimura, Y. Aoyagi and S. Namba
Jpn J. Appl. Phys.
29, 1435-1436
1990



434 Atomic layer epitaxy of AlAs and AlGaAs
T. Meguro, S. Iwai Y. Aoyagi, K. Ozaki, Y. Yamamoto, T. Suzuki, Y. Okano and A. Hirata
J. Cryst. Growth
99, 540-544
1990



435 Surface analysis by sputtered neutral mass spectrometry with electron-beam-excited plasma
Y. Hashiguchi, S. Hayashi, T. Ohtsubo, S. Kato, M. Hamazaki, T. Hara Y. Aoyagi and S. Namba
Surf. and Interface Anal.
14, 595-597
1989



436 Induced defects in GaAs etched by low energy ions in electron beam excited plasma (EBEP) system
J.Z. Yu, N. Masui, Y. Yuba , T. Hara, M. Hamagaki, Y. Aoyagi, K. Gamo and S. Namba
Jpn. J. Appl. Phys.
28, 2391-2395
1989



437 Photo assisted chemical beam epitaxy of GaAs
K. Nagata, Y. Aoyagi, S. Namba and S. Den
J. Cryst. Growth
95, 142-144
1989



438 The determination of the band offset of multi-quantum wells by magneto-optical measurements
Q. H. Hou, Y. Segawa, Y. Aoyagi, S. Namba and J. M. Zhou
Solid State Commun.
74, 159-163
1989



439 Quantum size effect on the exciton polariton in GaAs thin films
J. Kusano, Y. Segawa, M. Mihara, Y. Aoyagi and S. Namba
Solid State Commun.
72, 215-218
1989



440 Nonlocal voltage fluctuations in a quasi ballistic electron waveguide
Y. Takagaki, K. Gamo, S. Namba, S. Takaoka, K. Murase, S. Ishida, K. Ishibashi and Y. Aoyagi
Solid State Commun.
69, 811-815
1989



441 Microstructures of GaAs fabricated by finely focused ion beam lithography
T. Shiokawa, P.H. Kim, M. Hamagaki, T. Hara, Y. Aoyagi, K. Toyoda and S. Namba
Microelectronic Eng.
9, 277-280
1989



442 New fabrication technique of quantum wire structures with dimensions precisely controlled by the CBE Method
Y. Iimura, S. Shimomura, K. Nagata, S. Den, Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
28, L1083-L1085
1989



443 Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser
T. Hara, K. Ando, N. Kusakabe, H. Yashiro and Y. Aoyagi
Jpn. J. Appl. Phys.
28, L1010-L1012
1989



444 Maskless ion implantation of cerium by focused ion beam
M. Kagami, T. Shiokawa, Y. Segawa, Y. Aoyagi, S. Namba, H. Okada and T. Ito
Jpn. J. Appl. Phys.
27, L1157-L1159
1988



445 A sputtered neutral mass spectrometer with high current, low energy ion bombardment
S. Kato, M. Hamagaki, T. Hara, K. Aoyagi, S. Namba, S. Hayashi and S. Yashiro
J. Crys. Growth B
35, 550-554
1988



446 Preparation of high-Tc superconducting films by Q-switched YAG laser sputtering
S. Komuro, Y. Aoyagi, T. Morikawa and S. Namba
Jpn. J. Appl. Phys.
27, L34-L36
1988



447 Effects of Hydrogen on growth mechanism of GaAs in chemical beam epitaxy
K. Nagata, Y. Iimura, Y. Aoyagi, S. Namba, S. Den and A. Moritani
J. Crys. Growth
93, 265-269
1988



448 Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs
Y. Takagaki, K. Gamo, S. Namba, S. Ishida, S. Takaoka, K. Murase, K. Ishibashi and Y. Aoyagi
Solid State Commun.
68, 1051-1054
1988



449 Surface Processes in laser-atomic layer epitaxy (laser-ALE) of GaAs
T. Meguro, T. Suzuki, K. Ozaki, Y. Okano, A. Hirata, Y. Yamamoto, S. Iwai, Y. Aoyagi and S. Namba
J. Crys. Growth
93, 190-194
1988



450 Fabrication and transport characteristics of semiconductor wire and ring structures
K. Ishibashi, Y. Takagaki, K. Gamo, S. Namba, S. Takaoka, K. Murase, S. Ishida and Y. Aoyagi
J. Vac. Sci. Technol B
6, 1852-1855
1988



451 Optical characterization of undoped GaAs crystals grown by reduced pressure metal organic vapor-phase epitaxy
J. Kusano, Y. Segawa, S. Iwai, Y. Aoyagi and S. Namba
J. Appl. Phys.
62, 1376-1380
1987



452 New high current low energy ion source
T. Hara, M. Hamagaki, A. Sanda, Y. Aoyagi and S. Namba
J. Vac.Sci.Technol. B
5, 366-368
1987



453 Observation of Aharonov-Bohm magnetoreistance oscillations in selectively doped GaAs-AlGaAs submicron structures
K. Ishibashi, Y. Takagaki, K. Gamo, S. Namba, Y. Aoyagi and M. Kawabe
Solid State Commun.
64, 573-576
1987



454 Sample size dependence of magnetoconductance fluctuation in narrow n+ -GaAs wires
K. Ishibashi, H. Kawai, K. Gamo, S. Namba, S. Ishida, K. Murase, Y. Aoyagi and M. Kawabe
Solid State Commun.
63, 1169-1171
1987



455 Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy
Y. Aoyagi, A. Doi, S. Iwai and S. Namba
J. Vac. Sci. & Technol. B
5, 1460-1464
1987



456 Effects of an electric field on the decay time of luminescence from a GaAs/Ga0.6Al0.4As multi-quantum-well structure
T. Miyoshi, Y. Aoyagi, Y. Segawa, S. Namba and N. Sano
Jpn. J. Appl. Phys.
26, 1442-1446
1987



457 Transient characteristics of luminescence from GaAs/Ga0.6Al0.4 As multi-quantum-well structure under resonant excitation
T. Miyoshi, Y. Aoyagi, Y. Segawa and S. Namba
Jpn. J. Appl. Phys.
26, 1438-1440
1987



458 Universal magnetoconductance fluctuations in narrow n+ GaAs wires
K. Ishibashi, K. Nagata, K. Gamo, S. Namba, S Ishida, K. Murase, M. Kawabe and Y. Aoyagi
Solid State Commun.
61, 385-389
1987



459 Transient grating method applied to electron-transfer dynamics at a semiconductor/liquid interface
S. Nakabayashi, S. Komuro, Y. Aoyagi, and A. Kira
J. Phys. Chem.
91, 1696-1698
1987



460 Stepwise monolayer growth of GaAs by switched laser metal organic vaporphase epitaxy
A. Doi, Y. Aoyagi and S. Namba
Appl. Phys. Letters
49, 785-787
1986



461 Growth of GaAs by switched laser metal organic vapor phase epitaxy
A. Doi, Y. Aoyagi and S. Namba
Appl. Phys. Letters
48, 1787-1789
1986



462 Characteristics of laser metal organic vaporphase epitaxy in GaAs
Y. Aoyagi, M. Kanazawa, A. Doi, S. Iwai and S. Namba
J. Appl. Phys.
60, 3131-3135
1986



463 New high current low energy ion source
T. Hara, M. Hamagaki, A. Sanda, Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
25, L252-L253
1986



464 Transient characteristics of photoluminescence from GaAs/Ga0.7Al0.3As multi quantum well structures
T. Miyoshi, Y. Aoyagi, Y. Segawa, S. Namba, M. Nunoshita
Jpn. J. Appl. Phys.
24, L53-L55
1985



465 Laser enhanced metal organic chemical vapor deposition crystal growth in GaAs
Y. Aoyagi, S. Masuda and S. Namba
Appl. Phys. Letters
47(1986年),48, 95-96(1986年),378
1985



466 Maskless fabrication of high quality DFB laser grating by laser induced chemical etching
Y. Aoyagi, S. Masuda, A. Doi and S. Namba
Jpn. J. Phys.
24, L294-L296
1985



467 1 GW high power sub picosecond pulse generation in near IR region
Y. Aoyagi, Y. Segawa, M. Inami and S. Namba
Opt. Commun.
52, 425-428
1985



468 Anodic oxidation of AlxGa1-xAs
J. Yu, Y. Aoyagi, S. Iwai, K. Toyoda and S. Namba
J. Appl. Phys.
56, 1895-1896
1984



469 30nm micro-fabrication in thick PMMA photoresist by focus ion beam
T. Shiokawa, Y. Aoyagi, P.H. Kim, K. Toyoda and S. Namba
Jpn. J. Appl. Phys.
23, L232-L233
1984



470 Compositional fine pattern formation at AlGaAs/GaAs interface by Zn implantation
S. Iwai, Y. Aoyagi, M. Iwaki, K. Toyoda and S. Namba
J. Appl. Phys.
54, 1634-1635
1983



471 High-power sub picosecond pulse generation in near-IR region by cavity-dumped passive and synchronous hybrid mode locking system
Y. Aoyagi, Y. Segawa, M. Inami and S. Namba
Jpn. J. Appl. Phys.
21, 1104
1982



472 Dynamic behavior of photo darkening process in As2S3 charocogenide glass
Y. Aoyagi, Y. Segawa, S. Namba, T. Shara, H. Nishihara and H. Gamo
Phys. Stat. Sol. (a)
67, 669-676
1981



473 Tunable sub picosecond pulse generation in near-IR region from OX-725 dye laser by passive and synchronous hybrid mode locking method
Y. Aoyagi, Y. Segawa and S. Namba
Jpn. J. Appl. Phys.
20, 1595-1596
1981



474 High spectroscopic qualities in blazed ion-etched holographic gratings
Y. Aoyagi, K. Sano and S. Namba
Opt. Commun.
29, 253-255
1979



475 イオンエッチング法で作られたブレーズドホログラフィックグレーティングの光学的特性
佐野一雄, 青柳克信, 難波 進
応用物理
48, 539-544
1979



476 Nd:YAGレーザー励起による紫外可変波長ピコ秒色素レーザー
東 健策, 中川 修, 瀬川勇三郎, 青柳克信
レーザー研究
6, 310-314
1978



477 イオンエッチング法でブレーズされたホログラフィックグレーティングの製作
佐野一雄, 青柳克信, 難波 進
分光研究
26, 327-333
1977



478 Tunable picosecond pulse source using distributed feedback laser
Y. Aoyagi and S. Namba
Opt. Commun.
23, 330-332
1977



479 Optical pulse generation from FM laser using gain dispersion
S. Konishi, Y. Aoyagi and S. Namba
Opt. Commun.
22, 358-360
1977



480 Blazed ion-etched holographic gratings
Y. Aoyagi and S. Namba
Optical Acta
23, 701-707
1976



481 Blazing of holographic grating by ion etching technique
Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
15, 721-722
1976



482 High-efficiency blazed grating couplers
T. Aoyagi, Y. Aoyagi and S. Namba
Appl. Phys. Letters
29, 303-304
1976



483 High efficient blazed grating couplers
T. Aoyagi, Y. Aoyagi and S. Namba
J. Opt. Soc. Am.
66, 292-295
1976



484 Highly collimated laser beam from tunable distributed feed back dye laser
T. Aoyagi, Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
15, 941-942
1976



485 Tunable distributed feedback dye laser
Y. Aoyagi, T. Aoyagi and S. Namba
Appl. Phys. Letters
27, 687-688
1975



486 可変波長DFB色素レーザー
青柳克信, 青柳 孝, 難波 進
レーザー研究
3, 28-33
1975



487 Electron-beam excited DFB laser in CdS
Y. Aoyagi and S. Namba
Appl. Phys. Letters
26, 24-26
1975



488 Distributed feedback laser in CdS under electron beam excitation
Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys. Suppl.
44, 39-43
1974



489 Laser oscillation in simple corrugated optical wave guide
Y. Aoyagi and S. Namba
Appl. Phys. Letters
24, 537-539
1974



490 Wavelength control of thin film DFB laser by changing film thickness
Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
13, 1031-1032
1974



491 Temperature tuning of 4-methylumbelliferon laser
Y. Aoyagi and S. Namba
Jpn. J. Appl. Phys.
12, 624-625
1973



492 Drift mobility measurements in copper phtalocyanie single crystals
Y. Aoyagi, K. Masuda and S. Namba
Mol. Cryst. and Liq. Cryst.
22, 301-308
1973



493 Explanation of light-intensity dependence of photoconductivity in zinc phthalocyanine
Y. Aoyagi, K. Masuda and S. Namba
J. Appl. Phys.
43, 249-251
1972



494 (博士取得論文)フタロシアニン有機半導体の電気伝導機構の研究



1972/03



495 Electrical and magnetic properties of phtalocyanie iodine charge transfer complex
Y. Aoyagi, K. Masuda and S. Namba
J. Phys. Soc Japan
31, 524-528
1971



496 Electrical Conduction in Phthalocyanie Single Crystals
Y. Aoyagi, K. Masuda and S. Namba
J. Phys. Soc. Japan
31, 164-170
1971



497 Electron spin resonance in diluted copper phthalocyanie
Y. Aoyagi, K. Masuda and S. Namba
J. Phys. Soc. Japan
23, 1188
1967



498 Uniaxial stress effects on electrical conductivity of DPPH single crystal
M. Kawabe, K. Masuda, S. Namba, T. Yamaguchi and Y. Aoyagi
J. Phys. Soc. Japan
21, 394
1966