Researcher Database

（Last updated : 2023-11-08 14:49:27）　

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MURAKAMI Masanori

Department / Course Ritsumeikan-Global Innovation Research Organization

Title / Position Senior Research Fellow

Academic background
1.	1971/07 Degree Acquisition	│ Kyoto University Doctor of Engineering
2.	～1966	Department of Metallurgy │ Faculty of Engineering │ Kyoto University │ Graduated
3.	～1968	Master Course │ Metallurgy Major │ Graduate School, Division of Engineering │ Kyoto University │ Completed
4.	～1971	Doctorial Course │ Metallurgy Major │ Graduate School, Division of Engineering │ Kyoto University │ Completed

Business career
1.	2007 ～ 2014	Professor Emeritus │ │

Subject of research
1.	Development of Electrode Materials for Compound Semiconductor Devices
2.	Interfacial Diffusion Mechanisms of Multilayered Thin Films
3.	Mechanical Properties of Thin Films
4.	Development of Superconductive Josephson Electrode Materials
5.	Development of Wiring Materials for Si Semiconductor Devices

Research summary
A basic research and development of metal thin film material for electronic devices I agree that the advancement of the society in the 20th century is supported by Si semiconductor devices. Although the performance improvement of Si semiconductor devices is mainly achieved by the development of designing, manufacturing technologies, I have been engaged in the research and development of various electronic materials since the 1970's based on the belief that "The performance improvement of electronic devices in the 21st century will be decided by the features of the materials rather than their size.", have developed various high-performance electronic materials to be used for the areas such as superconductivity and silicone semiconductor devices and have contributed to the performance improvement of these devices. This wide pioneering research on electronic devices across the basics through the development is highly evaluated in the world. My main research achievements are listed as follows in chronological order: (1) The development of high reliable Josephson device materials, (2) The development of low contact resistance contact materials (for compound semiconductor devices) by elucidating charge transport mechanism on the boundary surface between a metal thin film material and a semiconductor, and (3) The development of high conductivity Cu wiring materials (for Si semiconductor devices) by elucidating grain growth mechanism of thin film materials.

Present specialized field
Nanomaterials engineering, Thin film/Surface and interfacial physical properties, Electronic materials/ Electric materials, Physical properties of metals/Metal-base materials, Inorganic materials/Physical properties, Composite materials/Surface and interface engineering (Keyword：Physical Properties of Thin Films , Interfacial Engineering Electrode Materials for Compound Semiconductor Devices , Wiring Materials for Semiconductor Devices , Wiring Materials for Semiconductor Devices)

Books
1.	1990	「Development of Ohmic Contact Materials for GaAs Integrated Circuits │Materials Science Reports 5」 │ ,pp.273-317
2.	1984	「Strain Relaxation Mechanisms of Thin Deposit Fi1ms │CRC Critical Reviews in Solid State and Material Sciences」 │ ,pp.317-354
3.	1988	「X-ray Diffraction Analysis of Interdiffusion in Thin Films │Treatise on Materials Science and Technology」 │ ,pp.vol.27, 201-248
4.	1993	「Ohmic Contacts to GaAs and Other III-V Compounds : Correlation of Microstructure with Electrical Properties │ Contacts to Semiconductors」 │ ,pp.1-66
5.	1988	「Thermal Stability of Pb Alloy Films Used in Josephson Junction Electrode│ Diffusion Phenomena in Thin Films and Microelectronic Materials」 │ ,pp.499-543
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Papers
1.	2012	“Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barrier for Cu Interconnects” │ Japanese Journal of Applied Physics │ (51),pp.04DB06-1-B06-5
2.	2012	” Role of Cu Film Texture in Grain Growth Correlated with Twin Boundary Formation” │ Acta Materialia │ (60),pp.588-595
3.	2011	Structure Analyses of Ti-Based Self-Formed Barrier Layers │ Japanese Journal of Applied Physics 50 │ ,pp.04DB03-1-B03-5
4.	2011	“Globalization of Japanese manufacturing: Back to Sprits of Oumi Merchants” │ Chemistry & Chemical Industry, │ (64-1),pp.62
5.	2011	” Growth of Ti-Based Interface Layer in Cu(Ti)/Glass Samples” │ Materials Transactions │ (52),pp.491-497
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Winning science prize
1.	2009/04	JAPANESE GOVERNMENT Medal with Purple Ribbon

Acquisition patent
1.		Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same （7,190,076）
2.		Electrode for p-type SiC （6,943,376）
3.		GaN related compound semiconductor and process for producing the same （6,573,117）
4.		GaN related compound semiconductor light-emitting device （6,291,840）
5.		Group III nitride compound semiconductor device and method for forming an electrode （7,018,915）
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