Researcher Database

MURAKAMI Masanori

Department / Course Ritsumeikan-Global Innovation Research Organization

Title / Position Senior Research Fellow

Acquisition patent
1.		Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same （7,190,076）
2.		Electrode for p-type SiC （6,943,376）
3.		GaN related compound semiconductor and process for producing the same （6,573,117）
4.		GaN related compound semiconductor light-emitting device （6,291,840）
5.		Group III nitride compound semiconductor device and method for forming an electrode （7,018,915）
6.		II-VI group compound semiconductor device （5,767,536）
7.		II-VI group compound semiconductor device and method for manufacturing the same （5,786,269）
8.		II-VI group compound semiconductor device metallic nitride ohmic contact for p-type （5,587,609）
9.		III nitride compound semiconductor element an electrode forming method （6,806,571）
10.		Josephson devices of improved thermal cyclability and method （4,295,147）
11.		Method for fabricating a semiconductor device having copper layer （5,744,394）
12.		Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode （5,767,007）
13.		Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode （5,904,554）
14.		Method for forming distributed barrier compound semiconductor contacts （5,098,859）
15.		Method for making II-VI group compound semiconductor device （6,033,929）
16.		Methods of forming electrodes on gallium nitride group compound semiconductors （5,811,319）
17.		Multi-layered structure for ohmic electrode fabrication （5,982,036）
18.		Ohmic electrode, its fabricating method and semiconductor device （6,033,976）
19.		Ohmic electrode, its fabrication method and semiconductor device （5,747,878）
20.		Ohmic electrode, method and multi-layered structure for making same （6,313,534）
21.		Ohmic electrode, method of manufacturing the same and semiconductor device （6,365,969）
22.		Process for producing GaN related compound semiconductor （6,500,689）
23.		Semiconductor device having a copper wiring layer formed on a base via a barrier layer of amorphous tantalum carbide （5,973,400）
24.		Thermally stable low resistance contact （4,849,802）
25.		Thermally stable ohmic contact for gallium-arsenide （4,796,082）
26.		Wiring structure for semiconductor device （7,164,207）