Researcher Database

MURATA Junji

Department / Course College of Science and Engineering Department of Mechanical Engineering

Title / Position Professor

Papers
1.	2024/08/15	Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte │ Applied Surface Science │ (Co-authored)
2.	2024/03/01	Ultrafast Solid-State Electrochemical Imprinting Utilizing Polymer Electrolyte Membrane Stamps for Static/Dynamic Structural Coloration and Letter Encryption │ Small Methods │ (Co-authored)
3.	2024/01/17	Cu Direct Nanopatterning Using Solid-State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface │ Advanced Materials Interface │ (Co-authored)
4.	2023/07	Environment-friendly electrochemical mechanical polishing using solid polymer electrolyte/CeO2 composite pad for highly efficient finishing of 4H-SiC (0001) surface │ Applied Surface Science │ 625,pp.157190 (Co-authored)
5.	2022/12	Improvement in the polishing characteristics of titanium-based materials using electrochemical mechanical polishing │ Surfaces and Interfaces │ 35,pp.102490 (Co-authored)
6.	2022/03/15	Direct micropatterning on a titanium surface through electrochemical imprint lithography with a polymer electrolyte membrane stamp │ Microelectronic Engineering │ 257,pp.111752 (Co-authored)
7.	2021/11	High-efficiency wafer-scale finishing of 4H-SiC (0001) surface using chemical-free electrochemical mechanical method with a solid polymer electrolyte │ Diamond and Related Materials │ (120),pp.108700 (Co-authored)
8.	2021	Electrochemical imprint lithography on Si surface using a patterned polymer electrolyte membrane │ Materials Chemistry and Physics │ 259,pp.124081 (Co-authored)
9.	2020/03	Investigation of Electrolytic Condition on Abrasive-Free Electrochemical Mechanical Polishing of 4H-SiC Using Ce Thin Film │ ECS Journal of Solid State Science and Technology │ 9 (3),pp.034002 (Co-authored)
10.	2019/11	Photo-Assisted Chemical Mechanical Polishing of Si Wafer Using Phosphorescent Particles as a Luminescent Agent │ ECS Journal of Solid State Science and Technology │ 8 (11),pp.P717-P733 (Co-authored)
11.	2019	Abrasive-free surface finishing of glass using a Ce film │ Journal of Materials Processing Technology │ 265,pp.56-62
12.	2018	Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing │ Electrochemistry Communications │ 97,pp.110-113
13.	2017	Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane–CeO₂ core–shell particles │ International Journal of Machine Tools and Manufacture │ 114,pp.1-7
14.	2016/02	Polymer/CeO₂-Fe₃O₄ multicomponent core-shell particles for high-efficiency magnetic-field-assisted polishing processes │ International Journal of Machine Tools and Manufacture │ 101,pp.28-34
15.	2015/07	Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy │ Electrochimica Acta │ 171,pp.89-95
16.	2014/02	Enhancement of photoluminescence efficiency from GaN(0001) by surface treatment │ Japanese Journal of Applied Physics │ 53 (021001-1-5)
17.	2013/02	Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer │ Japanese Journal of Applied Physics │ 52(3R) (036504-1-4)
18.	2012/05	Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst │ Journal of Crystal Growth │ 349,pp.83-88 (Co-authored)
19.	2012/03	Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid │ Physica Status Solidi C │ 9,pp.433-435 (Co-authored)
20.	2012/03	Improvement of Removal Rate in Abrasive-free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid │ Japanese Journal of Applied Physics │ 51,pp.2012 (Co-authored)
21.	2012/01	Atomically Smooth Gallium Nitride Surfaces prepared by chemical Etching with Platinum Catalyst in Water │ Journal of the Electrochemical Society │ 159 (4),pp.H417-H420 (Co-authored)
22.	2011/04	Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H?SiC (0001) surface │ Journal of Nanoscience and Nanotechnology │ 11 (4),pp.2928-2930 (Co-authored)
23.	2011/04	Efficient wet etching of GaN (0001) substrate with subsurface damage layer │ Journal of Nanoscience and Nanotechnology │ 11 (04),pp.2979-2982 (Co-authored)
24.	2011/04	Improved Optical and Electrical Characteristics of Free-standing GaN substrates by Chemical Polishing Utilizing Photo-Electrochemical Method │ Journal of Nanoscience and Nanotechnology │ 11 (04),pp.2882-2885 (Co-authored)
25.	2011/04	Structure and Magnetic Properties of Mono- and Bi-Layer Graphene Films on Ultraprecision Figured 4H-SiC(0001) Surfaces │ Journal of Nanoscience and Nanotechnology │ 11 (04),pp.2897-2902 (Co-authored)
26.	2011/02	Abrasive-free planarization of 3-inch 4H-SiC substrate using catalyst-referred etching │ Materials Science Forum │ 679-680,pp.493-495 (Co-authored)
27.	2011/02	TEM observation of 8 deg off-axis 4H-SiC(0001) surfaces planarized by catalyst-referred etching │ Materials Science Forum │ 679-680,pp.489-492 (Co-authored)
28.	2011	Formation of wide and atomically ﬂat graphene layers on ultraprecision-ﬁgured4H-SiC(0001) surfaces │ Surface Science │ 605,pp.597-605 (Co-authored)
29.	2011	Formation of wide and atomically flat graphene layers on ultraprecision-figured4H-SiC(0001) surfaces │ Surface Science │ 605,pp.597-605
30.	2011	Influence of gallium additives on surface roughness for photoelectrochemical planarization of GaN │ Physica Status Solidi (c) │ 8,pp.2223-2225 (Co-authored)
31.	2010/08	On-machine Method to Condition the Grinding Ability of Resin-Bond Wheels │ Advanced Materials Research │ 126-128,pp.159-164 (Co-authored)
32.	2010/08	On-machine Method to Condition the Grinding Ability of Resin-Bond Wheels │ ,pp.126-128 159-164
33.	2010	Influence of the UV light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride │ Materials Science Forum │ 645-648,pp.795-798 (Co-authored)
34.	2010	Reduction of surface roughness of 4H-SiC by catalyst-referred etching │ Materials Science Forum │ 645-648,pp.775-758 (Co-authored)
35.	2009	A Study on a Surface Preparation Method for Single-Crystal SiC Using an Fe Catalyst │ Journal of Electronic Materials │ 38,pp.159-163 (Co-authored)
36.	2009	Planarization of GaN (0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst │ Japanese Journal of Applied Physics │ 48,pp.121001-12100104 (Co-authored)
37.	2008	Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution │ Journal of Crystal Growth │ 310,pp.1637-1641 (Co-authored)
38.	2008	Damage-free Planarization of 2-inch 4H-SiC Wafer Using Pt Catalyst Plate and HF solution │ Materials Science Forum │ 600-603,pp.835-838 (Co-authored)
39.	2008	New chemical planarization of SiC and GaN using an Fe plate in H2O2 solution │ Materials Science Forum │ 600-603,pp.815-818 (Co-authored)
40.	2007	Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst │ Applied Physics Letters │ 90,pp.202106 1-3 (Co-authored)
41.	2007	Catalyst-referred etching of 4H-SiC substrate using hydroxyl radicals generated from hydrogen peroxide molecules │ Surface and Interface Analysis │ 40,pp.998-1001 (Co-authored)
42.	2007	Catalyst-Referred Etching of Silicon │ Science and Technology of Advanced Materials │ 8,pp.162 (Co-authored)
43.	2007	Damage-free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching │ Materials Science Forum │ 556-557,pp.749-751 (Co-authored)
44.	2007	Defect-Free Planarization of 4H-SiC(0001) Substrate Using Reference Plate │ Japanese Journal of Applied Physics │ 47,pp.104-107 (Co-authored)
45.	2007	Fabrication of damascene Cu wirings using solid acidic catalyst │ Science and Technology of Advanced Materials │ 8,pp.166-169 (Co-authored)
46.	2006	Novel abrasive-free planarization of 4H-SiC (0001) using catalyst │ Journal of Electronic Materials │ 35,pp.L11-L14 (Co-authored)