研究者学術情報データベース

イマイ　シゲル
今井　茂
IMAI Shigeru

所属理工学部電気電子工学科

職名教授

論文
1.	2024/01/04	Arrangement rule of stability regions and single‑electron transfer in common‑gate quadruple‑dot devices for the real ratio of gate capacitances │ Journal of Computational Electronics │ 23 (1),51-64頁 (共著)
2.	2020/08/02	Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions │ Journal of Computational Electronics │ 19 (4),1494-1506頁 (共著)
3.	2019/02	Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances │ Japanese Journal of Applied Physics │ 58 (03),034001 (共著)
4.	2018/04	Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances │ Japanese Journal of Applied Physics │ 57 (6),064001 (共著)
5.	2015/09	Single-electron pumping in single-common-gate triple-dot devices with asymmetric gate capacitances │ Japanese Journal of Applied Physics │ 54 (10),104001 (共著)
6.	2015/05	Stability diagrams and turnstile operations of single-common-gate triple-dot single-electron devices with outer junction capacitances different from inner ones │ Japanese Journal of Applied Physics │ 54 (6),064001 (共著)
7.	2014/08	Single-common-gate triple-dot single-electron devices with side gate capacitances larger than the central one │ Japanese Journal of Applied Physics │ 53,094002 (共著)
8.	2012/11	Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances │ Japanese Journal of Applied Physics │ 51,124301 (共著)
9.	2011/03	Stability diagrams of Triple-Dot Single-Electron Device with Single Common Gate │ Japanese Journal of Applied Physics │ 50,034302 (単著)
10.	2009/12	Analytical Study on a Single-Electron Device with Three Islands connected to One Gate Electrode │ Japanese Journal of Applied Physics │ 48,124502 (共著)
11.	2008/12	Analytical Study on a Single Electron Device with Two Islands Connected to One Gate Electrode │ Japanese Journal of Applied Physics │ 47 (12),9003-9009 (共著)
12.	2004/04	XAFS Study of Silicon Oxide Films Fabricated by Atomic-Layer CVD │ Memoirs of The SR Center Ritsumeikan University │ (6),79-86 (共著)
13.	2001	Deposition of Polyethylene Thin Films Using Synchrotron Radiation Ablation │ Diamond and Related Materials │ 10,937-941 (共著)
14.	2000	放射光アブレーションによるポリパラフェニレン薄膜の作製 │ 高分子論文集 │ 57 (2),86-94 (共著)
15.	1999/12	Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation │ Japanese Journal of Applied Physics │ 38 (12A),6846-6850 (共著)
16.	1999/02	Deposition of Polyethylene Thin Films Using Syncrotron Radiation Ablation │ Japanese Journal of Applied Physics │ 38 (2A),863-867 (共著)
17.	1998	Atomic-Layer Chemical-Vapor-Deposition of Hydrogen-Free Silicon Dioxide Films │ Applied Sorface Science │ 130-132,202-207 (共著)
18.	1997/03	Atomic Layer Etching of Germanium │ Applied Surface Science │ 112,87-91 (共著)
19.	1996	Ideal Monolayer adsorption of Germanium on Si(100) Surface │ Applied Surface Science │ 107,137-144 (共著)
20.	1996	Modeling of Silicon Atomic-Layer-Epitaxy │ Applied Surface Science │ 107,161-171 (共著)
21.	1995/11	Sub-Atomic Layer Growth of SiC at Low Temperatures │ Japanese Journal of Applied Physics │ 34 (11),6166-6170 (共著)
22.	1995/09	Atomic Layer Etching of Si by Thermal Desorption Method │ Japanese Journal of Applied Physics │ 34 (9A),5049-5053 (共著)
23.	1995/02	Electrical Properties of Ultralarge Grain Polycrystalline Silicon Film Produced by Excimer Laser Recrystallization Method │ Japanese Journal of Applied Physics │ 34 (2A),459-463 (共著)
24.	1995	Atomic Hydrogen-Assisted ALE of Germanium │ Applied Surface Science │ 90,349-356 (共著)
25.	1995	Atomic Layer Epitaxy of Silicon │ Materials and Manufacturing Processes │ 10 (2),267-281 (共著)
26.	1994	Atomic Layer Epitaxy of Germanium │ Applied Surface Science │ 82-83,380-386 (共著)
27.	1994	Atomic Layer Epitaxy of Silicon by Source Gas Confinement Method │ Transactions of the Materials Research Society of Japan │ 19A,145-148 (共著)
28.	1994	Hydrogen Atom Assisted ALE of Silicon │ Applied Surface Science │ 82-83,322-326 (共著)
29.	1993/04	Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life-Test Method │ Journal of the Electrochemical Society │ 140 (4),1131-1137 (共著)
30.	1993/03	Atomic Layer Epitaxy of Si Using Atomic H │ Thin Solid Films │ 225 (1-2),168-172 (共著)