Researcher Database

（Last updated : 2025-03-10 18:01:35）　

IMAI Shigeru

Department / Course College of Science and Engineering Department of Electrical and Electronic Engineering

Title / Position Professor

Other Affiliations
1.	Graduate School of Science and Engineering

Academic background
1.		│ Tohoku University Doctor of Engineering
2.	～1985	Department of Electronics │ Faculty of Engineering │ Tohoku University │ Graduated
3.	～1990	Doctorial Course │ Electronics │ Graduate School, Division of Engineering │ Tohoku University │ Completed

Research activities
1.		The Japan Society of Applied Physics
2.		The Institute of Electrical Engineers of Japan
3.		The Institute of Electronics, Information and Communication Engineers (IEICE)

Subject of research
1.	Theoretical study on single-electron devices

Research summary
Theoretical study on single-electron devices I theoretically seek the behavior of common-gate multi-dot single-electron devices. I clarified the following things. Double-dot devices behave only as single-electron transistors. Triple-dot devices with symmetrical gate capacitances always behave as single-electron turnstiles whether central gate capacitance is larger or smaller. Triple-dot and quadruple-dot devices with certain asymmetrical gate capacitances behave as single-electron pumps. Presently, I am studying behavior of multi-dot devices with unhomogeneous junction or gate capacitances.

Present specialized field
Electronic and Electric Materials Engineering (Keyword：electronic device engineering)

Papers
1.	2024/01/04	Arrangement rule of stability regions and single‑electron transfer in common‑gate quadruple‑dot devices for the real ratio of gate capacitances │ Journal of Computational Electronics │ 23 (1),pp.51-64
2.	2020/08/02	Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions │ Journal of Computational Electronics │ 19 (4),pp.1494-1506
3.	2019/02	Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances │ Japanese Journal of Applied Physics │ 58 (03),pp.034001
4.	2018/04	Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances │ Japanese Journal of Applied Physics │ 57 (6),pp.064001
5.	2015/09	Single-electron pumping in single-common-gate triple-dot devices with asymmetric gate capacitances │ Japanese Journal of Applied Physics │ 54 (10),pp.104001
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Academic conference presentation
1.	2000/09	Deposition of Functional Carbon Compound Thin Films by Synchrotron Radiation Ablation
2.	1998/06	Deposition of Thin Films Using Synchrotron Radiation Ablation
3.	1997/10	Atomic-Layer Chemical-Vapor-Deposition of Hydrogen-Free Silicon Dioxide Thin Films
4.	1996/07	Atomic Layer Etching of Germanium
5.	1994/11	Atomic Layer Etching of Si by Thermal Desorption Method
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Acquisition patent
1.		結晶性薄膜の製造方法（特願平10-6569）
2.		周期配列した微結晶の製造方法（特願平10-9236）
3.		超微細パターンの並列的製造方法（特願平10-152904）
4.		超微細周期構造の製造方法（特願平10-152905）
5.		超微細周期構造の製造方法（特願平10-3712）