研究者学術情報データベース

（最終更新日 : 2024-03-01 15:52:12）　

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ハラ　トモヒコ
原　知彦
HARA TOMOHIKO

所属総合科学技術研究機構

職名研究員

学歴
1.	2020/04/01～2023/10/31	豊田工業大学博士後期課程修了
2.	2017/04/01～2020/12/31	豊田工業大学工学研究科先端工学修士課程修了

職歴
1.	2023/10/01 ～ 2023/12/31	豊田工業大学半導体研究室研究補助

研究テーマ
1.	高効率ペロブスカイト太陽電池の研究

論文
1.	2024/01	DLTS analysis of interface and near-interface bulk defects induced by TCO-plasma deposition in carrier-selective contact solar cells │ AIP advance │ 14 (1),015202 (共著)
2.	2023/01	Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films │ Japanese Journal of Applied Physics │ 12,015003 (共著)
3.	2022/09	Analysis of recombination centers near an interface of a metal–SiO₂–Si structure by double carrier pulse deep-level transient spectroscopy │ AIP advance │ 12 (9),095316 (共著)
4.	2022/03	DLTS with Bayesian Inference for Analyzing RPD Induced Defects in Bulk near SiO₂/Si Interface │ ECS Journal of Solid State Science and Technology │ 11,035002 (共著)
5.	2021/05/26	Light Induced Recombination Center at SiO₂/Si Interface by the Reactive Plasma Deposition │ 17,399-405頁 (共著)
全件表示（7件）

学会発表
1.	2023	DLTS analysis for RPD-induced defects near passivation layer /Si interface in carrier selective contact solar cells (30th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes)
2.	2023	Three dimensional DLTS analysis using machine learning for evaluating process-induced defects in crystal Si solar cells (34th International Photovoltaic Science and Engineering Conference (PVSEC-34))
3.	2022	DC-DLTS法を使用したRPD誘起欠陥の再結合性評価 (第19回「次世代の太陽光発電システム」シンポジウム)
4.	2022	Electrical property investigation of the SiO2/Si interface processed by reactive plasma deposition (The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP19))
5.	2022	Si 結晶内酸素が RPD 誘起欠陥に与える影響 (2022年第69回応用物理学会春季学術講演会)
全件表示（16件）