立命館大学 研究者学術情報データベース
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デウラ モモコ
出浦 桃子
DEURA MOMOKO
所属
立命館グローバル・イノベーション研究機構
職名
准教授
学会発表
1.
2023/11
RF-MBE growth and characterization of InGaN thermoelectric thin film (14th International Conference on Nitride Semiconductors)
2.
2022/10
MOVPE of GaN layer with double-layered voids on rough SiC/Si substrate formed using Si surface carbonization (International Workshop on Nitride Semiconductors 2022)
3.
2021/03
MOVPE of GaN on SiC/Si substrates formed by Si surface carbonization (The 8th Asian Conference on Crystal Growth and Crystal Technology)
4.
2018/06
Impact of AlN interlayer growth temperature on strain of GaN layer during MOVPE on Si substrates (19th International Conference on Metalorganic Vapor Phase Epitaxy)
5.
2017/07
Mechanical properties of cubic-BN bulk single crystal evaluated by nanoindentation (12th International Conference on Nitride Semiconductors)
6.
2016/08
Evaluation of mechanical properties for w-BN using nanoindentation (The 18th International Conference on Crystal Growth and Epitaxy)
7.
2016/05
ナノインデンテーションを用いたInNの弾性特性の解明 (第8回窒化物半導体結晶成長講演会)
8.
2015/11
Correlation between crystal quality and mechanical properties of InN (The 6th International Symposium on Growth of III-Nitrides)
9.
2015/03
化合物半導体を中心とした混晶薄膜ヘテロ構造の結晶成長 (第62回応用物理学会春季学術講演会)
10.
2012/10
Investigation of growth mechanism for InGaN by MOVPE using computational reactor simulation (International Workshop on Nitride Semiconductors 2012)
11.
2012/05
Growth and Characterization of High-In Content InGaN for Red LEDs by MOVPE (International Workshop on Frontier of Nitride Semiconductor Alloy Photonics)
12.
2010/09
High-temperature phosphorus passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si (42nd Solid State Devices and Materials)
13.
2009/10
In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si (EuroCVD-17)
14.
2009/08
Twin-free InGaAs thin layer on Si by multi-step micro-channel selective-area MOVPE (14th US-OMVPE)
15.
2009/05
Uniform InGaAs Micro-Discs on Si by Micro-Channel Selective-Area MOVPE (21st IEEE LEOS Indium Phosphide Related Materials)
16.
2008/09
微小領域選択MOVPEにおけるSi上InGaAsの横方向成長過程 (第69回応用物理学会学術講演会)
17.
2008/06
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si (14th IC-MOVPE)
18.
2008/06
Kinetic analysis of surface adsorption layer for InGaAsP-related binary and ternary systems using in situ RAS (14th IC-MOVPE)
19.
2007/06
Kinetics of surface adsorption layer on GaAs and InP studied with in situ RAS (12th EW-MOVPE)